Publications

Affichage de 6711 à 6720 sur 16064


  • Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

  • Communication dans un congrès

Band gap formation and elastic wave transmission in two-dimentional surface phononic crystal

Sergey Yankin, Abdelkrim Talbi, Yu Du, Jean-Claude Gerbedoen, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

Using finite element method analysis of surface acoustic wave (SAW) propagation in the phononic crystal in a form of periodic lattice from nickel pillars, located on a piezoelectric substrate of Y+128°-cut LiNbO3, has been conducted. Amplitude and phase characteristics of SAW propagation through…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018435⟩

  • Communication dans un congrès

[Invited] Self-assembly of organic molecules on semiconductor surfaces

Fabrizio Cleri

3rd Korea-France Joint Symposium, 2014, Seoul, South Korea. ⟨hal-01054999⟩

  • Communication dans un congrès

Développement de matériaux hybrides par voie sol-gel limitant l'endommagement laser

F. Compoint, C. Ambard, H. Piombini, P. Belleville, K. Valle, Carmen Navarro Sanchez, P. Ruello, Marc Duquennoy

Journées SOL-GEL 2014, 2014, Tours, France. ⟨hal-00996834⟩

  • Article dans une revue

Disorder-perturbed Landau levels in high-electron-mobility epitaxial graphene

Simon Maëro, Abderrezak Torche, Thanyanan Phuphachong, Emiliano Pallecchi, Abdelkarim Ouerghi, Robson Ferreira, Louis-Anne de Vaulchier, Yves Guldner

We show that the Landau levels in epitaxial graphene in the presence of localized defects are significantly modified compared to those of an ideal system. We report on magnetospectroscopy experiments performed on high-quality samples. Besides typical interband magneto-optical transitions, we…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90, pp.195433. ⟨hal-01156613⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 3/5]

Raffaele Pisano

2014. ⟨hal-04511043⟩