Publications

• Communication dans un congrès

A 1D phoxonic crystal

J. Gomis-Bresco, D. Navarro-Urrios, Mourad Oudich, Said El-Jallal, A. Griol, D. Puerto, E. Chavez, Yan Pennec, Bahram Djafari-Rouhani, F. Alzina, A. Martínez, C.M. Sotomayor Torres

Simultaneous confinement of light and sound in the same cavity generates a strong phonon-photon interaction, known as optomechanical (OM) coupling. Several optomechanical systems provided already proof of concept demonstrations for enhanced telecommunication devices and sensors. And using OM…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00962402⟩

• Communication dans un congrès

On wafer silicon integrated noise source characterization up to 110 GHz based on germanium-on-silicon photodiode

Sandrine Oeuvrard, Jean-Francois Lampin, Guillaume Ducournau, Sylvie Lepilliet, Francois Danneville, Thomas Quemerais, Daniel Gloria

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic bench and demonstrating…

27th IEEE International Conference on Microelectronic Test Structures, ICMTS 2014, 2014, Udine, Italy. pp.150-154, ⟨10.1109/ICMTS.2014.6841484⟩. ⟨hal-01055046⟩

• Article dans une revue

F center in lithium fluoride revisited : comparison of solid-state physics and quantum-chemistry approaches

Ferenc Karsai, Paul Tiwald, Robert Laskowski, Fabien Tran, David Koller, Stefanie Gräfe, Joachim Burgdörfer, Ludger Wirtz, Peter Blaha

We revisit the theoretical description of the F color center in lithium fluoride employing advanced complementary ab initio techniques. We compare the results from periodic supercell calculations involving density-functional theory (DFT) and post-DFT techniques with those from the embedded-cluster…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, 125429, 12 p. ⟨10.1103/PhysRevB.89.125429⟩. ⟨hal-00968483⟩

• Article dans une revue

Enhancing LSPR sensitivity of Au gratings through graphene coupling to Au film

Thomas Maurer, Rana Nicolas, Gaëtan Lévêque, P. Subramanian, Julien Proust, Jérémie Béal, Silvere Schuermans, Jean-Pierre Vilcot, Z. Herro, M. Kazan, Jerome Plain, Rabah Boukherroub, Abdellatif Akjouj, Bahram Djafari-Rouhani, Pierre-Michel Adam, Sabine Szunerits

A particular interesting plasmonic system is that of metallic nanostructures interacting with metal films. As the localized surface plasmon resonance (LSPR) behavior of gold nanostructures (Au NPs) on the top of a gold thin film is exquisitely sensitive to the spacer distance of the film-Au NPs, we…

Plasmonics, 2014, 9, pp.507-512. ⟨10.1007/s11468-013-9649-0⟩. ⟨hal-00994804⟩

• Communication dans un congrès

Room-temperature quantum spin Hall effect in HgTe honeycomb superlattices

Cristiane Morais Smith, Wouter Beugeling, Efterpi Kalesaki, Yann-Michel Niquet, Christophe Delerue, Daniel Vanmaekelbergh

The recent experimental realization of self-assembled honeycomb superlattices of truncated semiconducting nanocrystals has opened a new path to engineer graphene-like structures. Atomistic band-structure calculations for honeycomb lattices of PbSe and CdSe have shown a rich band structure, with…

American Physical Society March Meeting, APS March Meeting 2014, Session B31 - Focus Session : Computational Discovery and Design of New Materials II, 2014, Denver, CO, United States. ⟨hal-00922589⟩

• Article dans une revue

Waves in periodic media : Fourier analysis shortcuts and physical insights, case of 2D phononic crystals

Samuel Dupont, Joseph Gazalet, Jean-Claude Kastelik

Phononic crystal is a structured media with periodic modulation of its physical properties that influences the propagation of elastic waves and leads to a peculiar behaviour, for instance the phononic band gap effect by which elastic waves cannot propagate in certain frequency ranges. The…

Journal of Physics: Conference Series, 2014, 2nd International Conference on Mathematical Modeling in Physical Sciences 2013 (IC-MSQUARE 2013) 1–5 September 2013, Prague, Czech Republic, 490 (1), pp.012120. ⟨10.1088/1742-6596/490/1/012120⟩. ⟨hal-00961500⟩

• Article dans une revue

Coherent THz communication at 200 GHz using a frequency comb, UTC-PD and electronic detection

Guillaume Ducournau, Y. Yoshimizu, S. Hisatake, F. Pavanello, Emilien Peytavit, Mohammed Zaknoune, T. Nagatsuma, Jean-Francois Lampin

A coherent terahertz (THz) link at 200 GHz, with a variable data rate up to 11 Gbit/s, featuring a very high sensitivity at the receiver, is investigated. The system uses a quasi-optic unitravelling carrier photodiode (UTC-PD) emitter and an electronic receiver. The coherent link relies on an…

• Article dans une revue

Introduction to Special Issue. Advances Historical Studies—Newton. History and Historical Epistemology of Science

Raffaele Pisano

Advances in Historical Studies, 2014, 3 (1), ⟨10.4236/ahs.2014.31001⟩. ⟨hal-04517883⟩

• Article dans une revue

Thermal management of electronic devices by composite materials integrated in silicon

Emmanuel Ollier, U. Soupremanien, V. Remondiere, J. Dijon, H. Le Poche, A.L. Seiler, F. Lefevre, S. Lips, Christophe Kinkelin, Nathalie Rolland, Paul-Alain Rolland, Malek Zegaoui, S. Lhostis, P. Ancey, B. Descouts, Y. Kaplan

As the power of electronic systems is increasing, thermal fluxes are getting higher, up to more than 100 W/cm2 in the more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. Most of the prior research has been focused on…

Microelectronic Engineering, 2014, 127, pp.28-33. ⟨10.1016/j.mee.2014.03.016⟩. ⟨hal-01005617⟩

• Communication dans un congrès

Combinaison d'une polarisation élevée et d'une forte tenue en tension pour les transistors AlN/GaN sur Si

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

Nous avons réalisé un transistor à double hétérostructure AlN/GaN/AlGaN sur substrat Silicium (111) combinant une tension de claquage élevée et une faible résistance à l'état passant avec une épaisseur totale de buffer de l'ordre de 2μm. Une technique de gravure locale du substrat a été…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018416⟩