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Affichage de 6901 à 6910 sur 16083

Article dans une revue

Optomechanical interactions in two-dimensional Si and GaAs phoXonic cavities

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani, A. Makhoute, Quentin Rolland, Samuel Dupont, Joseph Gazalet

We investigate theoretically the optomechanical interactions inside cavities created in two-dimensional infinite phoXonic crystals constituted by a square array of holes in silicon (Si) and gallium arsenide (GaAs) matrices. The cavity is simply obtained by removing one hole in the perfect crystal.…

Journal of Physics: Condensed Matter, 2014, 26, 015005, 12 p. ⟨10.1088/0953-8984/26/1/015005⟩. ⟨hal-00923930⟩

Article dans une revue

Magneto-transport subband spectroscopy in InAs nanowires

Florian Vigneau, Vladimir Prudkovskiy, Ivan Duchemin, Walter Escoffier, Philippe Caroff, Yann-Michel Niquet, Renaud Leturcq, Michel Goiran, Bertrand Raquet

We report on magnetotransport measurements in InAs nanowires under a large magnetic field (up to 55 T), providing a spectroscopy of the one-dimensional electronic band structure. Large modulations of the conductance mediated by a control of the Fermi energy reveal the Landau fragmentation, carrying…

Physical Review Letters, 2014, 112, 076801, 5 p. ⟨10.1103/PhysRevLett.112.076801⟩. ⟨hal-00959896⟩

Article dans une revue

High-definition television transmission at 600 GHz combining THz photonics hotspot and high-sensitivity heterodyne receiver

Guillaume Ducournau, Fabio Pavanello, Alexandre Beck, L. Tohme, S. Blin, P. Nouvel, Emilien Peytavit, Mohamed Zaknoune, P. Szriftgiser, Jean-Francois Lampin

A 600 GHz data transmission using the combination of a photonic emission using a uni-travelling carrier photodiode and an electronic detection is investigated. A high-definition television transmission at this carrier frequency with a very low power at the receiver is reported. Only 10 nW of…

Electronics Letters, 2014, 50 (5), pp.413-415. ⟨10.1049/el.2013.3796⟩. ⟨hal-00955223⟩

Article dans une revue

Graphene nanotransistors for RF charge detection

E. Pallecchi, Q. Wilmart, A.C. Betz, S.H. Jhang, G. Fève, J.M. Berroir, Sylvie Lepilliet, Gilles Dambrine, H. Happy, B. Plaçais

We have studied the static and dynamical properties of a graphene microwave nanotransistor to be used as sensitive fast charge detectors. The channel consists of exfoliated graphene on SiO2 with a 120 nm long, 900-1500 nm wide top-gate deposited on 5 nm AlOx dielectric. The scattering parameters…

Journal of Physics D: Applied Physics, 2014, 47, 094004, 5 p. ⟨10.1088/0022-3727/47/9/094004⟩. ⟨hal-00946703⟩

Communication dans un congrès

Design and radiation hardness of next generation solar UV radiometers

Samuel Gissot, Ali Benmoussa, Boris Giordanengo, Ali Soltani, Terubumi Saito, Udo Schühle, Udo Kroth, Alexander Gottwald

For next space-based ultraviolet (UV) solar radiometers, we propose a design based on subsystem components that are selected according to lessons learned from previous flying missions and ground irradiation campaigns. UV interference filters inherited from space-based solar missions show strong…

IEEE Nuclear and Space Radiation Effects Conference, NSREC 2014, 2014, Paris, France. paper W-24, 6 p. ⟨hal-01063876⟩

Article dans une revue

Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic…

Physical Review X, 2014, 4 (1), pp.0110101. ⟨10.1103/PhysRevX.4.011010⟩. ⟨hal-00939871⟩

Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩

Article dans une revue

Improved efficiency by the effect of strain on the structure of a solar cell based on GaInP/GaAs

Abdelkader Aissat, Rachid Bestam, Jean-Pierre Vilcot

This work is aimed at the study of GaInP-based photovoltaic cell. The effects of In content, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the GaInP structure were investigated. We noticed that for higher In concentrations, the band…

International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering, 2014, 3, pp.7038-7046. ⟨hal-00947584⟩

Communication dans un congrès

Approach-to-equilibrium molecular dynamics for thermal conductivies and boundary conductances

Pier Luca Palla, Evelyne Lampin, Pierre-Arnaud Francioso, Fabrizio Cleri

Thermal transport is simulated at the atomic scale by approach-to-equilibrium molecular dynamics simulations (AEMD) [1]. In this method, a hot and a cold regions are delimited, before the approach-to-equilibrium is simulated by releasing the thermal constraint. The temperature difference between…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00966169⟩

Article dans une revue

UWB cooperatif radar for localization and communication dedicated to guided transport

Tarik Tahri, Yassin El Hillali, Laila Sakkila, Atika Rivenq

Wireless technology for communication and localization in train applications are widely used. Ultra wide band appears as a very suitable technology for this kind of application, due to its large bandwidth, also to its good resistance to the interference and to multipath. In this paper, a new system…

International Journal of Intelligent Systems and Applications, 2014, 6, pp.27-33. ⟨10.5815/ijisa.2014.10.04⟩. ⟨hal-01056958⟩