Publications

Affichage de 7361 à 7370 sur 16055


  • ART

MEMS piezoresistive ring resonator for AFM imaging with pico-Newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

Journal of Micromechanics and Microengineering, 2013, 23, pp.035016-1-10. ⟨10.1088/0960-1317/23/3/035016⟩. ⟨hal-00795965⟩

  • ART

Substrate mode-integrated SPR sensor

C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette

Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩

  • ART

BCB cap packaging of MEMS switches integrated with 100-m MMIC wafer

S. Seok, J. Kim, M. Fryziel, N. Rolland, B. Grandchamp, W. Simon, R. Baggen

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3, pp.1799-1803. ⟨10.1109/TCPMT.2013.2278713⟩. ⟨hal-00903757⟩

  • COMM

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Stéphanie Rennesson, M. Chmielowska, S. Chenot, Yvon Cordier, François Lecourt, N. Defrance, Marie Lesecq, Virginie Hoel, Etienne Okada, Jean-Claude de Jaeger

10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States. ⟨hal-00987956⟩

  • COMM

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

  • ART

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f…

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

  • ART

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

  • ART

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩