Publications

• Communication dans un congrès

Influence de l'Au nanométrique sur la conductivité des nanofils en Si

M.S. Moldovan, I. Florea, D. Hourlier, O. Ersen

13ème Colloque de la Société Française des Microscopies, SFMu 2013, 2013, Nantes, France. ⟨hal-00878504⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩

• Article dans une revue

Hidden surface states at non-polar GaN (101¯0) facets : intrinsic pinning of nanowires

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

Applied Physics Letters, 2013, 103, 152101, 4 p. ⟨10.1063/1.4823723⟩. ⟨hal-00877636⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged…

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩

• Article dans une revue

Optimal PWR codes for TH-PPM UWB multiple-access interference mitigation

K. Kouassi, Laurent Clavier, I. Doumbia, P. Rolland

IEEE Communications Letters, 2013, 17, pp.103-106. ⟨10.1109/LCOMM.2012.112812.122204⟩. ⟨hal-00795949⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic…

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩