Publications

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Communication dans un congrès

Conducting IPNs based self-standing and ultrathin microactuators operating in air

Ali Maziz, Cedric Plesse, C. Chevrot, D. Teyssie, Caroline Soyer, Eric Cattan, F. Vidal

7th World Congress on Biomimetics, Artificial Muscles and Nano-Bio, BAMN 2013, 2013, Jeju Island, South Korea. ⟨hal-00908687⟩

• Article dans une revue

A robust thermal microstructure for mass flow rate measurement in steady and unsteady flows

R. Viard, Abdelkrim Talbi, A. Merlen, Philippe Pernod, C. Frankiewicz, J.C. Gerbedoen, Vladimir Preobrazhensky

Journal of Micromechanics and Microengineering, 2013, 23, pp.065016-1-8. ⟨10.1088/0960-1317/23/6/065016⟩. ⟨hal-00821233⟩

• Communication dans un congrès

Geometry optimization for sub-THz Gunn emission : a V-shape GaN nanodevice

I. Iniguez-De-La-Torre, J.F. Millithaler, A. Iniguez-De-La-Torre, J. Mateos, P. Sangare, Guillaume Ducournau, Christophe Gaquière, T. Gonzales

18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON18, 2013, Matsue, Japan. ⟨hal-00823433⟩

• Article dans une revue

Establishment of a derivatization method to quantify thiol function in sulfur-containing plasma polymer films

D. Thiry, R. Francq, D. Cossement, David Guérin, D. Vuillaume, R. Snyders

Langmuir, 2013, 29, pp.13183-13189. ⟨10.1021/la402891t⟩. ⟨hal-00903758⟩

• Autre publication scientifique

Conception et réalisation de cellules solaires à base de nanostructures silicium

Di Zhou

2013. ⟨hal-00906046⟩

• Communication dans un congrès

Engineering of dispersion curves and band gaps in a phononic crystal made of pillars on a membrane or substrate

Bahram Djafari-Rouhani, Abdelali Mrabti, Mourad Oudich, Abdellatif Akjouj, Yan Pennec, Bernard Bonello

We present the recent progress in our theoretical work about the acoustic properties of phononic crystals constituted by a periodic array of pillars on a membrane or on a substrate. In the case of a thin membrane, we have shown, in addition to the Bragg gaps, the possibility of a much lower…

ASME 2013 International Mechanical Engineering Congress and Exposition, IMECE 2013, Symposium on Vibration, Acoustics and Wave Propagation, 2013, San Diego, CA, United States. ⟨hal-00986891⟩

• Autre publication scientifique

Contribution à la conception optimale de microsystèmes en silicium à actionnement électrostatique. Synthèse automatique, réalisation et caractérisation d'une micropince à haute résolution de force

Aymen Grira

2013. ⟨hal-00827398⟩

• Communication dans un congrès

Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique

Julien Camus, Quentin Simon, Keltouma Aït Aïssa, Salma Bensalem, Laurent Le Brizoual, Gilles Tessier, Yves Scudeller, Mohamed Abdou Djouadi, Yvon Cordier, Éric Frayssinet, Jean-Claude de Jaeger, Magdalena Chmielowska, Maud Nemoz, Philippe Vennéguès, Sébastien Chenot, Nicolas Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France. ⟨hal-00878878⟩