Publications

• Article dans une revue

Delay time calculation for dual-wavelength quantum cascade lasers

A. Hamadou, S. Lamari, Jean-Luc Thobel

Journal of Applied Physics, 2013, 114, 203102, 7 p. ⟨10.1063/1.4829914⟩. ⟨hal-00912357⟩

• Article dans une revue

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

• Article dans une revue

Joint channel and phase noise estimation in OFDM systems at very high speeds

Jin Fang, Eric Pierre Simon, Marion Berbineau, M. Lienard

In this paper, the problem of joint phase noise and channel estimation for OFDM systems over a fast time-varying frequency-selective channel is explored. Each channel tap time-variation within one OFDM symbol is approximated by a Basis Expansion Model (BEM). Joint estimation is performed on…

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2013, 67 (4), pp.295-300. ⟨10.1016/j.aeue.2012.09.002⟩. ⟨hal-00797209⟩

• Article dans une revue

MEMS piezoresistive ring resonator for AFM imaging with pico-Newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

Journal of Micromechanics and Microengineering, 2013, 23, pp.035016-1-10. ⟨10.1088/0960-1317/23/3/035016⟩. ⟨hal-00795965⟩

• Communication dans un congrès

Caractérisation et étude du temps de transit des électrons dans une structure HEMT à hétérojonction InAlN/GaN

Alain Agboton

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957791⟩

• Communication dans un congrès

Phase change memory for neuromorphic systems and applications

M. Suri, O. Bichler, D. Querlioz, V. Sousa, L. Perniola, D. Vuillaume, C. Gamrat, B. de Salvo

12th European-Phase Change and Ovonics Symposium, E-PCOS 2013, 2013, Berlin, Germany. ⟨hal-00957793⟩

• Article dans une revue

The Faraday threshold in small cylinders and the sidewall non-ideality

William R. Batson, Farzam Zoueshtiagh, Raviprasad Narayanan

In this work we investigate, by way of experiments and theory, the Faraday instability threshold in cylinders at low frequencies. This implies large wavelengths where effects from mode discretization cannot be ignored. Careful selection of the working fluids has resulted in an immiscible interface…

Journal of Fluid Mechanics, 2013, 729, pp.496-523. ⟨10.1017/jfm.2013.324⟩. ⟨hal-00871919⟩

• Article dans une revue

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f…

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

• Communication dans un congrès

Measuring the size distribution of paramagnetic nanoparticles in the vibrating sample magnetometer

Sergey Koshelyuk

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 204, 3 p. ⟨hal-00957775⟩

• Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩