Publications

• Article dans une revue

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

A. Westlund, P. Sangare, Guillaume Ducournau, P.A. Nilsson, Christophe Gaquière, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2013, 103, pp.133504-1-4. ⟨10.1063/1.4821949⟩. ⟨hal-00872026⟩

• Article dans une revue

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

Applied Physics Letters, 2013, 103, pp.122104-1-4. ⟨10.1063/1.4821293⟩. ⟨hal-00871957⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Article dans une revue

Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-Francois Dayen, David Halley

Nanotechnology, 2013, 24 (47), pp.475708. ⟨10.1088/0957-4484/24/47/475708⟩. ⟨hal-00881293⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Article dans une revue

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• Article dans une revue

Coupled mode enhanced giant magnetoplasmonics transverse Kerr effect

L. Halagacka, M. Vanwolleghem, K. Postava, B. Dagens, J. Pistora

Optics Express, 2013, 21, pp.21741-21755. ⟨10.1364/OE.21.021741⟩. ⟨hal-00877668⟩

• Communication dans un congrès

A new photomechanical molecular switch based on a linear π-conjugated system

S. Lenfant, D. Demeter, M. Oçafrain, P. Blanchard, David Guérin, Christophe Krzeminski, F. Cleri, J. Roncali, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878937⟩

• Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878944⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 2/4]

Raffaele Pisano

2013. ⟨hal-04511051⟩