Publications

• Article dans une revue

The effect of long-term working memory through personalization applied to free recall : Uncurbing the primacy-effect enthusiasm

Alessandro Guida, Doriane Gras, Y. Noel, Olivier Le Bohec, Christophe Quaireau, Stéphane Nicolas

In this study, a personalization method (Guida, Tardieu, & Nicolas, European Journal of Cognitive Psychology, 21: 862-896 2009) was applied to a free-recall task. Fifteen pairs of words, composed of an object and a location, were presented to 93 participants, who had to mentally associate…

Memory and Cognition, 2013, 41, pp.571-587. ⟨10.3758/s13421-012-0284-3⟩. ⟨halshs-01428585⟩

• Article dans une revue

BCB cap packaging of MEMS switches integrated with 100-m MMIC wafer

S. Seok, J. Kim, M. Fryziel, N. Rolland, B. Grandchamp, W. Simon, R. Baggen

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3, pp.1799-1803. ⟨10.1109/TCPMT.2013.2278713⟩. ⟨hal-00903757⟩

• Article dans une revue

Substrate mode-integrated SPR sensor

C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette

Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

• Communication dans un congrès

Giant piezoresistance in silicon nanowires

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, 2013, San Francisco, CA, United States. ⟨hal-00811788⟩

• Article dans une revue

Theoretical approach to the feasibility of power-line communication in aircrafts

Virginie Degardin, I. Junqua, M. Lienard, Pierre Degauque, S. Bertuol

IEEE Transactions on Vehicular Technology, 2013, 62, pp.1362-1366. ⟨10.1109/TVT.2012.2228245⟩. ⟨hal-00812342⟩

• Communication dans un congrès

RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩

• Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 1st ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2013, 978-94-007-4144-7. ⟨hal-04515868⟩