Publications

• Pré-publication, Document de travail

Modelling of Silicon Oxynitridation by Nitrous Oxide using the Reaction Rate Approach, Modélisation de l'oxynitridation du silicium via l'oxyde nitreux par une méthode cinétique reactionnelle

Christophe Dominique Krzeminski

<div><p>Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge…

2013. ⟨hal-05690606⟩

• Communication dans un congrès

[Invité] Interactions optomécaniques dans les cavités phoxoniques

Bahram Djafari-Rouhani, M. Oudich, Said El-Jallal, Yan Pennec

14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, 2013, Evian, France. ⟨hal-00819474⟩

• Communication dans un congrès

Interactions optomécaniques dans les cavités phoxoniques

Said El-Jallal, Mourad Oudich, Yan Pennec, Bahram Djafari-Rouhani, Abdelkader Makhoute

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957779⟩

• Communication dans un congrès

Extraordinary room temperature THz heterodyne detector: the self-switching nanodiode

J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangare, B. Grimbert, M. Faucher, Guillaume Ducournau, Christophe Gaquière, I. Iniguez-De-La-Torre, J. Mateos, T. Gonzalez

18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructure, 2013, Matsue, Japan. ⟨hal-01926264⟩

• Article dans une revue

Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film : demonstration on AlN

Arnaud Devos, P. Emery, E. Defay, N. Ben Hassine, G. Parat

We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort optical…

Review of Scientific Instruments, 2013, 84, pp.015007-1-4. ⟨10.1063/1.4788936⟩. ⟨hal-00796410⟩

• Article dans une revue

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi, M. Gassoumi, H. Mejri, I. Saidi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Current Applied Physics, 2013, 13, pp.1359-1364. ⟨10.1016/j.cap.2013.04.003⟩. ⟨hal-00872006⟩

• Communication dans un congrès

InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France. ⟨hal-00813609⟩

• Autre publication scientifique

Vers une électronique terahertz : contribution à la technologie des transistors III-V

Mohammed Zaknoune

2013. ⟨hal-00813614⟩

• Communication dans un congrès

Laser ultrasonics and mode conversion for flaw depth gauging

Frédéric Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Compared to earliest non destructive testing and evaluation methods based on transducers, laser ultrasonics shows specific advantages. It is a non-contact method combining a high spatial resolution and a large bandwidth, allowing high temperature and/or geometrically complex materials testing. In…

13th International Symposium on Nondestructive Characterization of Materials, NDCM-XIII, 2013, Le Mans, France. paper 15509, 9 p. ⟨hal-00971600⟩

• Article dans une revue

Fundamentals of charged devices : energy changes in a capacitor medium

J.S. Young, Laurent Baudry

Capacitors and derivative devices continue to be as relevant as ever, both at the frontiers of scientific and technological research and in the development of commercial products. Central to such pursuits is the essential requirement that all aspects of the work done in charging or discharging…

EPL - Europhysics Letters, 2013, 101, pp.58001-1-5. ⟨10.1209/0295-5075/101/58001⟩. ⟨hal-00811707⟩