Publications

• Communication dans un congrès

Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

N. Clement, S. Desbief, K. Smaali, G. Patriarche, P. Leclere, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878800⟩

• Communication dans un congrès

Antenne fer platine sur substrat ultra-souple accordable mécaniquement en fréquence en bande millimétrique

Y. Orlic, B. Lacroix, Nicolas Tiercelin, G. Dufour, Philippe Pernod, Vladimir Preobrazhensky, J. Papapolymerou, P. Coquet

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-TM2-5, 4 p. ⟨hal-00878385⟩

• Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

• Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Communication dans un congrès

A multi-path multi-rate CMOS polar DPA for wideband multi-standard RF transmitters

A. Werquin, A. Frappe, A. Kaiser

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, 2013, Seattle, WA, United States. paper RTU2A-4, 327-330, ⟨10.1109/RFIC.2013.6569595⟩. ⟨hal-00877745⟩

• Article dans une revue

Blind digital modulation detector for MIMO systems over high-speed railway channels

Sofiane Kharbech, Iyad Dayoub, E. Simon, Marie Zwingelstein

Lecture Notes in Computer Science, 2013, 7865, pp.232-241. ⟨10.1007/978-3-642-37974-1_19⟩. ⟨hal-00877703⟩

• Communication dans un congrès

Interferometric technique for scanning near-field microwave microscopy applications

H. Bakli, Kamel Haddadi, T. Lasri

IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2013, 2013, Minneapolis, MN, United States. pp.1694-1698, ⟨10.1109/I2MTC.2013.6555703⟩. ⟨hal-00877837⟩

• Article dans une revue

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩