Publications

• Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

• Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

• Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• Communication dans un congrès

Antenne fer platine sur substrat ultra-souple accordable mécaniquement en fréquence en bande millimétrique

Y. Orlic, B. Lacroix, Nicolas Tiercelin, G. Dufour, Philippe Pernod, Vladimir Preobrazhensky, J. Papapolymerou, P. Coquet

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-TM2-5, 4 p. ⟨hal-00878385⟩

• Article dans une revue

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Esther Alarcon Llado, Sònia Conesa-Boj, X. Wallart, Philippe Caroff, Anna Fontcuberta I Morral

Thanks to their wide band structure tunability, GaAs1−xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman…

Nanotechnology, 2013, 24, pp.405707-1-7. ⟨10.1088/0957-4484/24/40/405707⟩. ⟨hal-00871906⟩

• Communication dans un congrès

Effect of electric bias field and pressure on PMN-PT piezoelectric single crystals in Tonpilz transducers

C. Granger, Anne-Christine Hladky, J.C. Debus, T. Pastureaud, M. Doisy, M. Pham Thi

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. ⟨hal-00934422⟩

• Article dans une revue

Dispersion engineering for multifunctional photonic crystal based nanophotonic devices at infrared wavelengths

M. Hofman, G. Scherrer, M. Kadic, X. Mélique, W. Smigaj, B. Cluzel, Sebastien Guenneau, D. Lippens, F. de Fornel, B. Gralak, O. Vanbésien

TIn this paper, we report the design, the fabrication and the near field optical microscopy of Negative Index Material (NIM) and GRadient INdex (GRIN) photonic crystal based flat lenses. They were fabricated on the basis of an InPbased photonic crystal technological platform including hole and…

Journal of Nanomedicine & Nanotechnology, 2013, 4, 1000185, 6 p. ⟨10.4172/2157-7439.1000185⟩. ⟨hal-00939049⟩

• Communication dans un congrès

Determination of the whole-body absorption cross section of a phantom using RiMAX

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard

The reverberation time has been measured in a reverberation chamber for different loads and for a cross polarized transceiver at the frequency of 1.8 GHz. We determine the whole-body absorption cross section of a canonical phantom using a maximum-likehood high-resolution channel parameters…

IEEE Antennas and Propagation Society International Symposium, AP-S/URSI 2013, Jul 2013, Orlando, FL, United States. paper 306.7, 716-717, ⟨10.1109/APS.2013.6711018⟩. ⟨hal-00957771⟩

• Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both…

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩