Publications

• Communication dans un congrès

Non-cooperative mobile localization using a 3D database correlation technique

Isabelle Vin, Davy Gaillot, Pierre Laly, M. Lienard

In urban and suburban areas, non cooperative accurate location of mobile station (MS) in the GSM bandwidth is still a challenge. Moreover, for some applications, the mobile is situated in Non Line of Sight (NLOS) conditions, leading to a worst accuracy of the location. Usually the localization…

5th COST IC1004 Management Committee and Scientific Meeting, 2012, Bristol, United Kingdom. ⟨hal-00961455⟩

• Communication dans un congrès

Fabrication of La2Ti2O7 nanostructures by focused Ga3+ ion beam and characterization by piezoresponse force microscopy

G. Declercq, A. Ferri, Z. Shao, A. Bayart, S. Saitzek, R. Desfeux, D. Deresmes, David Troadec, J. Costecalde, Denis Remiens

Joint 21th International Symposium on Applications of Ferroelectrics, ISAF 2012, 11st European Conference on the Applications of Polar Dielectrics, ECAPD 2012, 4th International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in P, 2012, Aveiro, Portugal. pp.1-3, ⟨10.1109/ISAF.2012.6297772⟩. ⟨hal-00801125⟩

• Communication dans un congrès

Electrical nerve agents sensors based on chemically functionalized nanomaterials

A. Carella, S. Clavaguera, C. Celle, S. Lenfant, D. Vuillaume, Emmanuel Dubois, V. Passi, L. Gorintin, P. Bondavalli, J.P. Simonato

NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, Santa Clara, CA, United States. pp.130-132. ⟨hal-00801097⟩

• Communication dans un congrès

CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications

M. Suri, O. Bichler, D. Querlioz, G. Palma, E. Vianello, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we demonstrate an original methodology to use Conductive-Bridge RAM (CBRAM) devices as binary synapses in low-power stochastic neuromorphic systems. A new circuit architecture, programming strategy and probabilistic STDP learning rule are proposed. We show, for the first time, how the…

IEEE International Electron Devices Meeting, Dec 2012, San Francisco, CA, United States. ⟨10.1109/IEDM.2012.6479017⟩. ⟨hal-00803088⟩

• Communication dans un congrès

Contact mechanics based on Preisach analysis

Vladislav Aleshin

The origin of acoustic contact nonlinearity is in nonlinear force-displacement relationships for mechanical contacts between solids or surfaces. The response of a particular contact depends on shapes of contacting surfaces (regular or random) as well as on external excitation (normal and/or…

European GDR-Workshop on Nonlinearities in Acoustics, 2012, Nice, France. ⟨hal-00819461⟩

• Article dans une revue

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• Communication dans un congrès

Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa 0.65Nb0.35O3 déposé en couche mince

Gregory Houzet, Thierry Lacrevaz, Cédric Bermond, Arnaud Le Febvrier, Stephanie Deputier, Maryline Guilloux-Viry, Karine Blary, B. Fléchet

12e Journées Caractérisation Microondes et Matériaux,, Mar 2012, Chambéry, France. ⟨hal-01068623⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this…

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩