Publications

• Communication dans un congrès

Contrôle passif des tubes par inter-corrélation de champ acoustique ambiant

S. Djili, Emmanuel Moulin, Jamal Assaad, F. Boubenider, Farouk Benmeddour

3ème Conférence Internationale sur le Soudage, le Contrôle Non Destructif et l'Industrie des Matériaux et Alliages, IC-WNDT-MI'12, 2012, Aïn El Turck-Oran, Algérie. pp.17-21. ⟨hal-00802648⟩

• Communication dans un congrès

Kinetics of N2(B3Πg) and N2(C3Πu) states in N2-Ar discharges sustained by a RF helical coupling device

Corinne Foissac, Jaroslav Krištof, Adriana Annusova, Pavel Veis, Philippe Supiot

A kinetic model is discussed for the two main emitting species (N2(B), N2(C)) of a N2-Ar plasma excited at 27 MHz by a helical cavity with operating pressure of 200 Pa. The present paper consistently illustrates, for miscellaneous Ar fractions and different positions, the great influence of the…

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. paper P1.1.9, 1-2. ⟨hal-00802620⟩

• Communication dans un congrès

Specular path estimation errors with ESPRIT, SAGE, and RiMAX in the presence of dense multipath

E. Tanghe, L. Martens, W. Joseph, D.P. Gaillot, M. Lienard, Pierre Degauque

2nd IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE APWC'12, 2012, Cape Town, South Africa. pp.315-316, ⟨10.1109/APWC.2012.6324917⟩. ⟨hal-00802575⟩

• Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

• Communication dans un congrès

Permittivité diélectrique des liquides dans la bande X

M.D. Belrhiti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID10, 1-4. ⟨hal-00806621⟩

• Communication dans un congrès

Démonstration expérimentale du couplage entre dipôles magnétique et électrique de cubes ferroélectriques

Véronique Sadaune, F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. sesion S8, papier ID6, 1-4. ⟨hal-00806601⟩

• Communication dans un congrès

Métamatériaux fishnet aux longueurs d'ondes submillimétriques

Frédéric Garet, S. Wang, M. Astic, Eric Lheurette, Karine Blary, Jean-Louis Coutaz, Didier Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S4, papier ID8, 1-4. ⟨hal-00806595⟩

• Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power…

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

• Communication dans un congrès

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩

• Communication dans un congrès

Investigation on the optical gain and threshold current density of Ga1-xInxAs1-y-zNySbz/GaAs strained quantum wells laser

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga 1-x In x As 1-y-z N y Sb z has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this…

3rd International Conference on Multimedia Computing and Systems, ICMCS'12, 2012, Tangier, Morocco. pp.1083-1086, ⟨10.1109/ICMCS.2012.6320124⟩. ⟨hal-00801123⟩