Publications

• Article dans une revue

Low frequency dielectric loss of metal/insulator/organic semiconductor junctions in ambient conditions

Romuald Ledru, Stéphane Pleutin, Bruno Grouiez, Damien Zander, H. Bejbouji, Kamal Lmimouni, Dominique Vuillaume

The complex admittance of metal/oxide/pentacene thin film junctions is investigated under ambient conditions. At low frequencies, a contribution attributed to proton diffusion through the oxide is seen. This diffusion is shown to be anomalous and is believed to be also at the origin of the bias…

Organic Electronics, 2012, 13 (10), pp.1916-1924. ⟨10.1016/j.orgel.2012.04.035⟩. ⟨hal-00787369⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this…

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Communication dans un congrès

Phononic and photonic properties of a stubbed strip waveguide

Yan Pennec, Bahram Djafari-Rouhani, Mourad Oudich, Said El-Jallal, Josemaria Escala, Alejandro Martinez, Vincent Laude

Many studies have been devoted to the search of photonic and phononic band gaps, but relatively few works are dealing with the simultaneous control of phonons and photons. Phoxonic structures hold promises for the simultaneous confinement and tailoring of sound and light waves with potential…

ASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012, Symposium on Phononic Crystals and Acoustic Metamaterials, 2012, Houston, TX, United States. ⟨hal-00986895⟩

• Article dans une revue

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• Article dans une revue

Decoding metric study for turbo codes in very impulsive environment

W. Gu, Laurent Clavier

IEEE Communications Letters, 2012, 16, pp.256-258. ⟨10.1109/LCOMM.2011.112311.111504⟩. ⟨hal-00786905⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Article dans une revue

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• Article dans une revue

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate…

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩