Publications

• Communication dans un congrès

Modélisation physique numérique 2D/3D de structures semiconductrices dans le domaine temporel basée sur le couplage électromagnétisme/transport

Christophe Dalle

7ème Conférence Européenne sur les Méthodes Numériques en Electromagnétisme, NUMELEC 2012, 2012, Marseille, France. pp.128-129. ⟨hal-00806614⟩

• Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

• Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• Article dans une revue

Theoretical and experimental evidence of level repulsion states and evanescent modes in sonic crystal stubbed waveguides

V. Romero-Garcia, Jerome O. Vasseur, Lluis Miquel Garcia-Raffi, Anne-Christine Hladky

The complex band structures calculated using the Extended Plane Wave Expansion (EPWE) reveal the presence of evanescent modes in periodic systems, never predicted by the classical ω(~k) methods, providing novel interpretations of several phenomena as well as a complete picture of the system. In…

New Journal of Physics, 2012, 14, pp.023049-1-21. ⟨10.1088/1367-2630/14/2/023049⟩. ⟨hal-00786887⟩

• Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

• Communication dans un congrès

Résolution de l'équation de Poisson généralisée discrète - Application aux capacités interdigitées ferroélectriques commandables en tension

P. Ropa, Ludovic Burgnies, Jean-Claude Carru

7ème Conférence Européenne sur les Méthodes Numériques en Electromagnétisme (NUMELEC 2012), Association des Alumni de l’Institut Montefiore (AIM), Jul 2012, Marseille, France. pp.148-149. ⟨hal-00806602⟩

• Communication dans un congrès

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

A. Khatab, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

17th International Conference on Molecular Beam Epitaxy, MBE 2012, 2012, Nara, Japan. ⟨hal-00798220⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩