Publications

Affichage de 8701 à 8710 sur 16175


  • Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

  • Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

  • Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

  • Brevet

Microsystème de génération d'un jet synthétique, procédé de fabrication et dispositif de contrôle d'écoulement correspondants

L. Gimeno-Monge, Abdelkrim Talbi, Philippe Pernod, A. Merlen, Vladimir Preobrazhensky, R. Viard

N° de brevet: FR2947813 (A1). 2011. ⟨hal-00559182⟩

  • Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

  • Article dans une revue

Mie resonance based left-handed metamaterial in the visible frequency range

L. Kang, D. Lippens

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.195125-1-6. ⟨10.1103/PhysRevB.83.195125⟩. ⟨hal-00597076⟩

  • Communication dans un congrès

Récepteur MMIC à 183 GHz pour le sondage atmosphérique

J.C. Orlhac, Gilles Dambrine, J.M. Goutoule, C. Goldstein

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 217, 1D4, 1-3. ⟨hal-00597149⟩

  • Communication dans un congrès

Influence de l'indium et l'azote sur la structure à puits quantique à base de Ga1-xInxAs1-xNy/GaAs

Abdelkader Aissat, Said Nacer, Mohamed Seghilani, Jean-Pierre Vilcot

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A4, papier 37, 1-4. ⟨hal-00591372⟩

  • Communication dans un congrès

Self aligned 200nm In0.53Ga0.47As

A. Olivier, J.J. Mo, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3. ⟨hal-00591363⟩