Publications

• Communication dans un congrès

CMOS digital tunable capacitance with tuning ratio up to 13 and 10dBm linearity for RF and millimeter-wave design

R. Debroucke, A. Pottrain, D. Titz, F. Gianesello, D. Gloria, C. Luxey, Christophe Gaquière

IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940648⟩. ⟨hal-00800111⟩

• Communication dans un congrès

Far-field THz radiation pattern from photoconductive emitters on different substrates

J. Klier, S. Wohnsiedler, W. Zouaghi, Emilien Peytavit, Jean-Francois Lampin, J. Jonuscheit, R. Beigang

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, 2011, Houston, TX, United States. paper Th4E.4, 1-2, ⟨10.1109/irmmw-THz.2011.6104974⟩. ⟨hal-00800482⟩

• Communication dans un congrès

Squeezing radiation from quantum cascade lasers with leaky waves

Miguel Beruete, Tahsin Akalin, Miguel Navarro-Cia, Guillaume Ducournau, Jean-Francois Lampin, Mario Sorolla

Several flat antennas consisting of a central slot surrounded by a metallic periodic structure are proposed to enhance the radiation of quantum cascade laser terahertz sources. A simulation study of the optimal profile for high gain and radiation efficiency is done. Prototypes are being fabricated

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.1, 1-2, ⟨10.1109/irmmw-THz.2011.6105066⟩. ⟨hal-00800485⟩

• Communication dans un congrès

Study of enhanced biosensors based on 2-D sandwiched plasmon photonic crystals

Jin-Ying Zhang, He Huang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, J. Zhou, Y.P. Huang

A novel sandwich structure of photonic crystal with periodic square array of hexagon holes was fabricated. The infrared optical properties in reflectance of the devices were tested. A sharp peak of surface plasmon resonance was observed at the incident angles of 30°. By the comparison of the…

IEEE Sensors Conference, 2011, Limerick, Ireland. pp.1321-1324, ⟨10.1109/ICSENS.2011.6126900⟩. ⟨hal-00800449⟩

• Communication dans un congrès

Fabrication and characterization of half-Kerfed LiNbO3-based high-frequency (>100MHz) ultrasonic array transducers

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, J. Zhou, Y.P. Huang

The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore,…

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1727-1730, ⟨10.1109/ULTSYM.2011.0431⟩. ⟨hal-00800467⟩

• Communication dans un congrès

Dry etching process on a conducting interpenetrating polymer network actuator for a flapping fly micro robot

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Eric Cattan, F. Vidal, C. Chevrot, D. Teyssie

ASME 2011 International Mechanical Engineering Congress & Exposition, IMECE 2011, 2011, Denver, CO, United States. pp.IMECE2011-63505-1-3. ⟨hal-00800389⟩

• Communication dans un congrès

Kinetic study of enzyme-catalyzed reaction at microscale level

Adil Elagli, A. Treizebre, Simon Laurette, Dominique Vercaigne-Marko, Didier Guillochon, Pascal Dhulster, Bertrand Bocquet, Renato Froidevaux

6th International Conference on Microtechnologies in Medicine and Biology, MMB 2011, 2011, Lucerne, Switzerland. ⟨hal-00807654⟩

• Communication dans un congrès

Towards cost-effective millimeter wave high power GaN devices

F Medjdoub

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. ⟨hal-00807130⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩