Publications

• Communication dans un congrès

Narrow linewidth tunable THz signal generation using a unitravelling carrier photodiode and a dual-mode laser

Guillaume Ducournau, Alain Rolland, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

A dual-frequency laser coupled to a unitravelling carrier photodiode is used to produce a highly coherent THz wave. THz signal is detected by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature and no active…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380162⟩. ⟨hal-00803095⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Communication dans un congrès

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• Article dans une revue

Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1078-1079. ⟨10.1049/el.2012.1966⟩. ⟨hal-00788173⟩

• Article dans une revue

Terahertz interferometer for integrated Goubau-line waveguides

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

An integrated Terahertz {Mach-Zehnder} interferometer is presented in order to perform differential measurements in a chip. Both simulation and experiment are performed for validating the interferometer structure. Destructive interference peaks are observed, and destructive frequencies are…

Progress In Electromagnetics Research Letters, 2012, 30, pp.49-58. ⟨10.2528/PIERL11121205⟩. ⟨hal-00788303⟩

• Communication dans un congrès

General solutions to the mechanical contact problem

Vladislav Aleshin, Koen van den Abeele, Olivier Bou Matar

A theory for mechanical contact of solids with friction is developed for a wide range of contacting profiles and loading histories. The starting point of the approach is the normal load-displacement dependency that can be obtained via analytical solutions for regular e.g. axisymmetric profiles and…

XVII International Conference on Nonlinear Elasticity in Materials, ICNEM 2012, Jul 2012, Cefalu, Sicily, Italy. pp.045012-1-11, ⟨10.1121/1.4764476⟩. ⟨hal-00819455⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩