Publications

• Article dans une revue

Investigation of indium nitride for micro-nanotechnology

Anisha Gokarna, Jean-Francois Lampin, Dominique Vignaud, El Hadj Dogheche, Didier Decoster, Sandra Ruffenach, Olivier Briot, Matthieu Moret

We present a study of non–intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature–dependent photoluminescence and time…

International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩. ⟨hal-00787438⟩

• Article dans une revue

Direct characterization of native chemical ligation of peptides on hydrogenated silicon nanowires

N. Dendane, O. Melnyk, T. Xu, B. Grandidier, Rabah Boukherroub, D. Stievenard, Yannick Coffinier

Langmuir, 2012, 28, pp.13336-13344. ⟨10.1021/la3030217⟩. ⟨hal-00787470⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by photomixing : coupling a unitravelling carrier photodiode and a two-axis dual-frequency laser

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Emilien Peytavit, Alexandre Beck, Tahsin Akalin, Mohamed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, M. Alouini

Conference on Lasers and Electro-Optics, CLEO 2012, Laser Science to Photonic Applications, 2012, San Jose, CA, United States. paper CTu1B.3, 1-2. ⟨hal-00803101⟩

• Article dans une revue

Honeycomb Photonic Crystal Waveguides in a Suspended Silicon Slab

Daniel Puerto, A. Griol, J.M. Escalante, Yan Pennec, Bahram Djafari-Rouhani, J.C. Beugnot, Vincent Laude, Alejandro Martínez

IEEE Photonics Technology Letters, 2012, 24, pp.2056. ⟨10.1109/LPT.2012.2219516⟩. ⟨hal-00759318⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Autre publication scientifique

Caractérisation par ondes acoustiques des surfaces fonctionnalisées

Nadine Saad

2012. ⟨hal-00799366⟩

• Autre publication scientifique

Design and optimization of surface plasmon resonance (SPR) biosensors

Edy Wijaya

2012. ⟨hal-00799301⟩

• Communication dans un congrès

Conducting interpenetrating polymer network based microactuators

Ali Maziz, Cedric Plesse, Alexandre Khaldi, Caroline Soyer, C. Chevrot, D. Teyssie, Eric Cattan, F. Vidal

2nd International Conference on Electromechanically Active Polymer Transducers and Artificial Muscles, EuroEAP 2012, 2012, Potsdam, Germany. ⟨hal-00798849⟩

• Communication dans un congrès

[Invited] Terahertz near field microscopy

Tahsin Akalin

3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2012, 2012, Paris, France. ⟨hal-00798872⟩

• Chapitre d'ouvrage

Nanoscale FETs

O. Moldovan, A. Lazaro, Francois Danneville, R. Picos, B. Nae, B. Iniguez, M.J. Deen

Deen M.J. Advances in imaging and electron physics : Silicon-based millimeter-wave technology - Measurement, modeling and applications, Elsevier, volume 174, chapter 4, 261-347, 2012, ISBN 978-0-12-394298-2. ⟨10.1016/B978-0-12-394298-2.00004-1⟩. ⟨hal-00798924⟩