Publications

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩

• Article dans une revue

Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

IEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩. ⟨hal-00603002⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Communication dans un congrès

Second-order modeling for Rayleigh flat fading channel estimation with Kalman filter

L. Ros, E.P. Simon

17th International Conference on Digital Signal Processing, DSP 2011, 2011, Corfu, Greece. pp.1-6, ⟨10.1109/ICDSP.2011.6004912⟩. ⟨hal-00800319⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential…

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Communication dans un congrès

Time domain analysis of propagation channels in tunnels

C. Garcia-Pardo, J.M. Molina-Garci-Pardo, M. Lienard, Pierre Degauque

7th Advanced International Conference on Telecommunications, AICT 2011, 2011, St Maarten, Netherlands. pp.1-5. ⟨hal-00800318⟩

• Communication dans un congrès

High impedance RF four-port reflectometer

A. El Fellahi, D. Glay, Kamel Haddadi, T. Lasri

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.491-494. ⟨hal-00800347⟩

• Communication dans un congrès

Sample preparation unit for online bio-processes monitoring

C. Wu, F. Bendriaa, M. Harnois, V. Senez

15th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2011, 2011, Seattle, WA, United States. pp.2034-2036. ⟨hal-00800388⟩

• Communication dans un congrès

Thin film transmission lines using cyclic olefin copolymer

Emilien Peytavit, C. Donche, Sylvie Lepilliet, Guillaume Ducournau, Jean-Francois Lampin

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, 2011, Houston, TX, United States. paper W2E.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105161⟩. ⟨hal-00800490⟩