Publications

• Communication dans un congrès

Modélisation des ondes élastiques émises par un défaut sous contrainte

W. Ben Khalifa, K. Jezzine, Sébastien Grondel

Journées COFREND, Conférences et exposition sur les essais non destructifs, 2011, Dunkerque, France. pp.1-10. ⟨hal-00806713⟩

• Communication dans un congrès

Couplage de fonctions microfluidiques et térahertz sur puce pour l'analyse d'interactions biologiques

Simon Laurette, A. Treizebre, Adil Elagli, Bertrand Bocquet

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, May 2011, Cachan, France. pp.1-4. ⟨hal-00806703⟩

• Communication dans un congrès

Métamatériaux à base de réseaux d'ouvertures sous longueur d'onde pour le contrôle de l'environnement aux fréquences terahertz

Nasser Soltani, Eric Lheurette, Shengxiang Wang, Frédéric Garet, Karine Blary, Jean-Louis Coutaz, Didier Lippens

17èmes Journées Nationales Micro-ondes, JNM 2011, May 2011, Brest, France. papier 97, 4B1, 1-4. ⟨hal-00597141⟩

• Article dans une revue

Field-induced vortices in weakly anisotropic ferroelectrics

Anaïs Sené, Laurent Baudry, Igor A. Luk'Yanchuk, Laurent Delahoche, Y. El Amraoui

Superlattices and Microstructures, 2011, 49, pp.314-317. ⟨10.1016/j.spmi.2010.05.001⟩. ⟨hal-00574497⟩

• Communication dans un congrès

Nucleation of vortices structures in ferroelectrics

L. Baudry, A. Sene, Igor A. Luk'Yanchuk, L. Lahoche

Multifunctional Nanomaterials : Mediterranean - East Europe Meeting, NanoEuroMed 2011, 2011, Uzhgorod, Ukraine. ⟨hal-00807623⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Article dans une revue

Size-dependent catalytic and melting properties of platinum-palladium nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

While nanocatalysis is a very active field, there have been very few studies in the size/shape-dependent catalytic properties of transition metals from a thermodynamical approach. Transition metal nanoparticles are very attractive due their high surface to volume ratio and their high surface energy…

Nanoscale Research Letters, 2011, 6, pp.396-1-5. ⟨10.1186/1556-276X-6-396⟩. ⟨hal-00639824⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩