Publications

• Communication dans un congrès

Développement de capteurs ultrasonores interdigités HF pour le CND des couches et des revêtements

J. Deboucq, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot

Journées COFREND, Conférences et exposition sur les essais non destructifs, 2011, Dunkerque, France. Papier 137, 1-10. ⟨hal-00806711⟩

• Communication dans un congrès

Electrically tunable metamaterials operating under normal incidences

F. Zhang, Q. Zhao, J.B. Sun, W.H. Zhang, J. Zhou, D. Lippens

30th Progress in Electromagnetics Research Symposium, PIERS 2011, 2011, Suzhou, China. ⟨hal-00807133⟩

• Communication dans un congrès

Design of electronic conducting polymer based microactuators by microsystem process

Ali Maziz, Cedric Plesse, Alexandre Khaldi, Caroline Soyer, C. Chevrot, D. Teyssie, Eric Cattan, F. Vidal

6th World Congress on Biomimetics, Artificial Muscles and Nano-Bio, 2011, Cergy-Pontoise, France. ⟨hal-00807674⟩

• Communication dans un congrès

Caractérisation de l'état d'une goutte d'eau sur une surface de silicium micro-texturée en utilisant deux méthodes de modélisation

N. Saad, J. Dgheim, Z. Herro, B. Merheb, Georges Nassar, Pierre Campistron, Julien Carlier, V. Thomy, M. Harnois, M. Ajaka, Bertrand Nongaillard

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807662⟩

• Communication dans un congrès

Etude théorique et expérimentale des structures nanométriques pour la conception de capteurs bio-plasmoniques

O. Saison, Sabine Szunerits, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807588⟩

• Article dans une revue

Erbium silicide growth in the presence of residual oxygen

N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its…

Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩

• Article dans une revue

Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩

• Article dans une revue

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the…

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩

• Article dans une revue

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked…

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩