Publications

Affichage de 9061 à 9070 sur 16173


  • Communication dans un congrès

Influence du retournement temporel sur la localisation au sein d'un réseau ad hoc

Michael Bocquet, Christophe Loyez, M. Friziel, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 51, 6F3, 1-4. ⟨hal-00603135⟩

  • Article dans une revue

Artificial magnetic properties of dielectric metamaterials in terms of effective circuit model

L.Y. Liu, J.B. Sun, X.J. Fu, J. Zhou, Q. Zhao, B. Fu, J.P. Liao, D. Lippens

Progress In Electromagnetics Research, 2011, 116, pp.159-170. ⟨10.2528/PIER11033004⟩. ⟨hal-00603007⟩

  • Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

  • Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

  • Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

  • Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

  • Communication dans un congrès

Very low effective electromagnetic parameters lenses for the unlicensed 60 GHz band

Miguel Navarro-Cia, Miguel Beruete, Mario Sorolla, Tahsin Akalin, Nader Engheta

In this presentation advances on metallic lenses based on extreme electromagnetic parameters will be shown: either epsilon near zero or epsilon and mu near zero simultaneously. The former is generated by an array of continuous waveguides at cutoff, whereas the latter is composed of stacked…

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper M2E.6, 1-2, ⟨10.1109/irmmw-THz.2011.6104807⟩. ⟨hal-00800491⟩