Publications

• Article dans une revue

Thickness effect on nanoscale electromechanical activity in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films studied by piezoresponse force microscopy

A. Ferri, M. Detalle, J.F. Blach, M. Warenghem, Denis Remiens, R. Desfeux

0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) ferroelectric thin films with thickness ranging from 28 to 110 nm were sputter deposited onto LaNiO3/SiO2/Si substrates. Optical properties were determined by spectroscopic ellipsometry. We found B = 4.6 and λ0 = 209 nm, which is consistent for all PMN–PT…

Journal of Applied Physics, 2011, 110 (10), pp.104101. ⟨10.1063/1.3660526⟩. ⟨hal-00783533⟩

• Communication dans un congrès

Formation and evolution of exotic polarization textures in nanoferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

International Symposium on Integrated Functionalities, ISIF 2011, 2011, Cambridge, England, United Kingdom. ⟨hal-00807624⟩

• Communication dans un congrès

[Invited] On chiral skyrmions in ferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

12th European Meeting on Ferroelectricity, EMF 2011, 2011, Bordeaux, France. ⟨hal-00807619⟩

• Communication dans un congrès

Tuning the Kohn anomaly in the phonon dispersion of graphene by interaction with the substrate and by doping

L. Wirtz, A. Allard, Claudio Attaccalite, M. Lazzeri, Francesco Mauri, A. Rubio

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579043⟩

• Article dans une revue

Resolution limit of a phononic crystal superlens

J.F. Robillard, J. Bucay, P.A. Deymier, A. Shelke, K. Muralidharan, B. Merheb, Jerome O. Vasseur, A. Sukhovich, J.H. Page

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.224301-1-11. ⟨10.1103/PhysRevB.83.224301⟩. ⟨hal-00603011⟩

• Article dans une revue

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

W.H. Chen, R. Larde, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige

Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in-situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To…

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8, pp.771-774. ⟨10.1002/pssc.201000233⟩. ⟨hal-00597124⟩

• Article dans une revue

Co-integrated microfluidic and THz functions for biochip devices

Simon Laurette, A. Treizebre, Bertrand Bocquet

TeraHertz (THz) spectroscopy is becoming an alternative way to probe biological interactions in real-time conditions. However, accurate and reproducible THz measurements of aqueous solutions, largely represented in life sciences, remain difficult. A THz microsystem which couples both…

Journal of Micromechanics and Microengineering, 2011, 21, pp.065029-1-8. ⟨10.1088/0960-1317/21/6/065029⟩. ⟨hal-00597101⟩

• Article dans une revue

Optical and electrochemical properties of tunable host-guest complexes linked to plasmonic interfaces

Fatiha Barka-Bouaifel, Joanna Niedziółka-Jönsson, Xavier Castel, Ophélie Saison-Francioso, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Patrice Woisel, Joël Lyskawa, Léna Sambe, Graeme Cooke, Nacer Bezzi, Rabah Boukherroub, Sabine Szunerits

This article describes the use of localized surface plasmon resonance (LSPR) interface to detect complexation/decomplexation steps of a controllable host–guest system at the solid–liquid interface. The LSPR interfaces consist of a sandwiched structure comprising a tin-doped indium oxide (ITO)…

Journal of Materials Chemistry, 2011, 21 (9), pp.3006-3013. ⟨10.1039/c0jm03293j⟩. ⟨hal-00579079⟩

• Communication dans un congrès

Nanofils et énergie : un domaine en forte expansion

Pere Roca I Cabarrocas, C. Lethien, Thierry Brousse, N. Guillet, A. Gruss, Agnès Bonvilain, G. Savelli, J. Stockholm, Luc Brohan, S. Perraud, T. Pauporte

Séminaire Annuel de l'Observatoire des Micro et Nanotechnologies, 2011, Paris, France. ⟨hal-00574515⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩