Publications

• Communication dans un congrès

100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4. ⟨hal-00799971⟩

• Communication dans un congrès

Antennes accordables en fréquence dans la bande des 60 GHz sur substrat élastomère ultrasouple

S. Hage-Ali, Nicolas Tiercelin, Philippe Coquet, Yannick Dusch, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.3C4, 1-4. ⟨hal-00597151⟩

• Article dans une revue

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• Article dans une revue

High-performance GaNAsSb/GaAs 1.55-µm waveguide photodetector

Z. Xu, N. Saadsaoud, W.K. Loke, K.H. Tan, S. Wicaksono, S.F. Yoon, G. Lecoustre, Didier Decoster, J. Chazelas

IEEE Transactions on Electron Devices, 2011, 58, pp.758-763. ⟨10.1109/TED.2010.2101601⟩. ⟨hal-00579070⟩

• Communication dans un congrès

Near-field scanning microscopy in liquid media based on microwave interferometry

Kamel Haddadi, D. Glay, T. Lasri

9th International Conference on Electromagnetic Wave Interaction with Water and Moist Substances, ISEMA 2011, 2011, United States. pp.185-192. ⟨hal-00603113⟩

• Article dans une revue

Parameter space mapping of InAs nanowire crystal structure

Kimberly A. Dick, Jessica Bolinsson, Maria E. Messing, Sebastian Lehmann, Jonas Johansson, Philippe Caroff

Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter,…

Journal of Vacuum Science and Technology, 2011, 29 (4), pp.04D103-1-9. ⟨10.1116/1.3593457⟩. ⟨hal-00603098⟩

• Article dans une revue

Effects of crystal phase mixing on the electrical properties of InAs nanowires

C. Thelander, P. Caroff, S.R. Plissard, A.W. Dey, K.A. Dick

Nano Letters, 2011, 11, pp.2424-2429. ⟨10.1021/nl2008339⟩. ⟨hal-00603006⟩

• Article dans une revue

10GbE and radio over fiber dual transmission through polymer optical fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.112502-1-3. ⟨10.1143/APEX.4.112502⟩. ⟨hal-00639809⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the…

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• Article dans une revue

Phase-controlling phononic crystals : realization of acoustic boolean logic gates

S. Bringuier, N. Swinteck, Jerome O. Vasseur, J.F. Robillard, K. Runge, K. Muralidharan, P.A. Deymier

Journal of the Acoustical Society of America, 2011, 130, pp.1919-1925. ⟨10.1121/1.3631627⟩. ⟨hal-00639811⟩