Publications

• COMM

Voltage controllable metamaterials infiltrated by liquid crystal

F. Zhang, Q. Zhao, J.B. Sun, Eric Lheurette, J. Zhou, D. Lippens

5th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials'2011, 2011, Barcelona, Spain. pp.331-333. ⟨hal-00799989⟩

• COMM

Millimeter-wave modeling of isolated MOS substrate network through gate-bulk measurements

B. Dormieu, C. Charbuillet, Francois Danneville, N. Kauffmann, P. Scheer

IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940662⟩. ⟨hal-00799791⟩

• COMM

Improvement in graphene nanoribbons process for field effet transistors

D. Mele, R. Fleurier, E. Pichonat, H. Happy

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799794⟩

• OTHER

Conception, fabrication et caractérisation d'un modulateur optique à commande plasmonique sur nitrure de gallium à une longueur d'onde de 1,55µm

Arnaud Stolz

2011. ⟨hal-00799425⟩

• OTHER

Instabilité explosive des ondes magneto-élastiques

Oleksandr Yevstafyev

2011. ⟨hal-00799397⟩

• OTHER

Réalisation d'une caméra infrarouge à bas coût pour application grand public

Charles Sion

2011. ⟨hal-00799465⟩

• OTHER

Etude, conception et réalisation d'un duplexeur émission/réception pour système de communication microonde large bande et de puissance à base de MEMS sur GaN

Matthieu Le Baillif

2011. ⟨hal-00799391⟩

• COMM

Electrical compact modelling of graphene transistors

S. Fregonese, H.N. Nguyen, C. Majek, C. Maneux, H. Happy, N. Meng, T. Zimmer

ImagineNano, Graphene 2011, 2011, Bilbao, Spain. pp.121-122. ⟨hal-00799969⟩

• ART

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential…

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• ART

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩