Publications

• Chapitre d'ouvrage

Ingénierie des matériaux et des structures, mécanique des solides, acoustique

Djimédo Kondo, Piotr Breitkopf, Robert Charlier, Paul Cristini, Valerie Deplano, Bertrand Dubus, Joseph Gril, Thierry Le Mogne, Frédéric Lebon, Nathalie Maurel, Nicolas Moes, Laurent Orgéas, Vincent Pagneux, Etienne Patoor, Sylvie Pommier, Claire Prada, Edgar Rauch, Jean-Jacques Sinou, Frédéric Valès, Claude Verdier

Les disciplines représentées dans la section 09 sont à la fois des disciplines de savoir, et des disciplines de l’ingénierie. On les retrouve aussi bien dans les activités de génération de connaissances de base, que dans la démarche de mise en œuvre de ces connaissances dans des réalisations…

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, pp.169-186, 2011, ISBN 978-2-271-07263-4. ⟨hal-00799637⟩

• Article dans une revue

Mechanical characterization of aluminium nanofilms

Gregory Guisbiers, Etienne Herth, L. Buchaillot

The mechanical properties (Young’s modulus, hardness, wear resistance) of aluminium nanofilms on silicon substrate are studied. Size effect on these mechanical properties are exhibited. Young’s modulus, hardness and wear resistance increases when the thickness is reduced. Experimental…

Microelectronic Engineering, 2011, 88 (5), pp.844-847. ⟨10.1016/j.mee.2010.06.028⟩. ⟨hal-00579052⟩

• Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩

• Article dans une revue

Vortex state in thin films of multicomponent ferroelectrics

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

The distribution of polarization in thin film of multicomponent weak anisotropic ferroelectric under application of an axially symmetric electric field induced by circular electrodes is studied. We demonstrate that above a certain critical field the instability towards abrupt formation of…

Thin Solid Films, 2011, 519 (17), pp.5808-5810. ⟨10.1016/j.tsf.2010.12.192⟩. ⟨hal-00603009⟩

• Article dans une revue

Low SAR planar antenna for multi standard cellular phones

M. Ben Ahmed, M. Bouhorma, F. Elouaai, A. Mamouni

European Physical Journal: Applied Physics, 2011, 53, pp.33604-1-6. ⟨10.1051/epjap/2010100064⟩. ⟨hal-00574501⟩

• Article dans une revue

Subterahertz hypersound attenuation in silica glass studied via picosecond acoustics

Simon Ayrinhac, Marie Foret, Arnaud Devos, Benoit Ruffle, Eric Courtens, René Vacher

We report picosecond acoustic measurements in silica-glass films grown by wet thermal oxidation on a (111) silicon substrate. The longitudinal acoustic phonons are observed over the range from 150 to 300 GHz using an infrared pump and a second harmonic blue probe. The transducer is an aluminum thin…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (1), pp.014204. ⟨10.1103/PhysRevB.83.014204⟩. ⟨hal-00567412⟩

• Article dans une revue

Electrical characterization of traps in AlGaN/GaN FAT-HEMT's on silicon substrate by C-V and DLTS measurements

M. Charfeddine, M. Gassoumi, H. Mosbahi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Modern Physics, 2011, 2, pp.1229-1234. ⟨10.4236/jmp.2011.210152⟩. ⟨hal-00783410⟩

• Article dans une revue

Germanium adsorption and initial growth on SrTiO3 (001) surface : a first principles investigation

J.J. Wang, I. Lefebvre

Journal of Physical Chemistry C, 2011, 115, pp.22893-22900. ⟨10.1021/jp205074w⟩. ⟨hal-00783408⟩

• Article dans une revue

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, T. Lasri, G. Guegan

Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩