Publications

• Article dans une revue

High dilution of anionic vacancies in Sr0.8Ba0.2Fe(O,F)~2.5

M. Sturza, S. Daviero-Minaud, M. Huve, N. Renaut, Nicolas Tiercelin, O. Mentre

Inorganic Chemistry, 2011, 50, pp.12499-12507. ⟨10.1021/ic2014072⟩. ⟨hal-00783376⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the…

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• Article dans une revue

Phase-controlling phononic crystals : realization of acoustic boolean logic gates

S. Bringuier, N. Swinteck, Jerome O. Vasseur, J.F. Robillard, K. Runge, K. Muralidharan, P.A. Deymier

Journal of the Acoustical Society of America, 2011, 130, pp.1919-1925. ⟨10.1121/1.3631627⟩. ⟨hal-00639811⟩

• Article dans une revue

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• Article dans une revue

Shielded cable transfer impedance measurements in the microwave range of 1 GHz to 10 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 229, pp.52-61. ⟨hal-00639920⟩

• Article dans une revue

10GbE and radio over fiber dual transmission through polymer optical fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.112502-1-3. ⟨10.1143/APEX.4.112502⟩. ⟨hal-00639809⟩

• Article dans une revue

Complex permittivity of low loss materials in the X band

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Science and Advanced Technology, 2011, 1, pp.221-224. ⟨hal-00639915⟩

• Article dans une revue

InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2011, 32, pp.1537-1539. ⟨10.1109/LED.2011.2166949⟩. ⟨hal-00639917⟩

• Communication dans un congrès

Spurious emissions reduction using multirate RF transmitter

A. Werquin, A. Frappe, A. Kaiser

IEEE International Symposium on Circuits and Systems, ISCAS 2011, 2011, Rio de Janeiro, Brazil. pp.965-968, ⟨10.1109/ISCAS.2011.5937728⟩. ⟨hal-00800022⟩

• Communication dans un congrès

10-MHz DC/DC converter based on GaN HEMT for RF applications

F. Gamand, V. Di Giacomo, Christophe Gaquière

33rd International Telecommunications Energy Conference, INTELEC 2011, 2011, Amsterdam, Netherlands. pp.1-4, ⟨10.1109/INTLEC.2011.6099887⟩. ⟨hal-00800105⟩