Publications

• Article dans une revue

Kinetics of RPECVD organosilicon polymer post-treatment in a N2/O2 microwave plasma remote afterglow

S. Abou Rich, V. Mille, Céline Vivien, S. Godey, P. Supiot

Plasma Processes and Polymers, 2010, 7, pp.775-784. ⟨10.1002/ppap.200900185⟩. ⟨hal-00549497⟩

• Article dans une revue

On the physical origin of conical bubble structure under an ultrasonic horn

Bertrand Dubus, C. Vanhille, C. Campos-Pozuelo, C. Granger

Ultrasonics Sonochemistry, 2010, 17, pp.810-818. ⟨10.1016/j.ultsonch.2010.03.003⟩. ⟨hal-00548559⟩

• Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩

• Article dans une revue

Wavelength and beam launching effects on silica optical fiber in local area networks

H. Mrabet, Iyad Dayoub, R. Attia, W. Hamouda

Optics Communications, 2010, 283, pp.4234-4241. ⟨10.1016/j.optcom.2010.06.034⟩. ⟨hal-00549472⟩

• Article dans une revue

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Xing Tang, Michel Rousseau, N. Defrance, Virginie Hoel, A. Soltani, R. Langer, Jean-Claude de Jaeger

For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self-heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical-thermalmodel has been developed to analyze the physical and thermal phenomena…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1820-1826. ⟨10.1002/pssa.200925321⟩. ⟨hal-00549464⟩

• Article dans une revue

Theoretical predictions of wurtzite III-nitride nano-materials properties

G. Guisbiers, D. Liu, Q. Jiang, L. Buchaillot

Physical Chemistry Chemical Physics, 2010, 12, pp.7203-7210. ⟨10.1039/c002496a⟩. ⟨hal-00548994⟩

• Article dans une revue

Two-terminal carbon nanotube programmable devices for adaptive architectures

Guillaume Agnus, Weisheng Zhao, Vincent Derycke, Arianna Filoramo, Y. Lhuillier, S. Lenfant, D. Vuillaume, C. Gamrat, J.P. Bourgoin

Carbon nanotube field-effect transistors functionalized with photoconducting polymer act as very efficient and non-volatile two-terminal programmable devices (see figure). Their optoelectronic programmability allows compensating for the critical issue of variability among as-built devices in…

Advanced Materials, 2010, 22, pp.702-706. ⟨10.1002/adma.200902170⟩. ⟨hal-00548986⟩

• Article dans une revue

Explosive instability of quasi-phonon triads in antiferromagnet under frequency modulated electromagnetic field

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, V. Berzhansky

Journal of Magnetism and Magnetic Materials, 2010, 322, pp.585-588. ⟨10.1016/j.jmmm.2009.09.067⟩. ⟨hal-00548960⟩

• Article dans une revue

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, Christophe Gaquière

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes…

Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩

• Communication dans un congrès

Résultats récents sur les commutateurs et mémoires moléculaires

K. Smaali, S. Lenfant, David Guérin, S. Karpe, M. Ocafrain, P. Blanchard, A. Rochefort, J. Roncali, D. Vuillaume

Session thématique champ proche du GDR 2426, Physique quantique mésoscopique, 2010, Paris, France. ⟨hal-00574079⟩