Publications

• Communication dans un congrès

Broadband waveguide-to-microstrip transition in W band

Fabio Pavanello, Ibrahim Türer, Tahsin Akalin, Simon Vandenbrouck, Emilien Peytavit, Jean-Francois Lampin

A novel transition has been conceived from microstrip (MS) to rectangular metallic waveguide (WG) with good matching over a broad band. Electromagnetic (EM) simulations confirm these properties and the actual fabrication has been shown feasible. S-Parameters measurements are underway.

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper M2D.5, 1-2, ⟨10.1109/irmmw-THz.2011.6104801⟩. ⟨hal-00800483⟩

• Communication dans un congrès

Efficient adaptation to channel state changes based on H.264/AVC transrating for power line transmission of video streams

Christophe Deknudt, A.S. Bacquet, Patrick Corlay, François-Xavier Coudoux, M. Slachciak

IEEE International Symposium on Power Line Communications and its Applications, ISPLC 2011, 2011, Italy. pp.CFP11843-USB, 141-145, ⟨10.1109/ISPLC.2011.5764380⟩. ⟨hal-00591355⟩

• Communication dans un congrès

Caractérisation des matériaux diélectriques en band X pour des applications de télécommunications

M.D. Belrhriti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Maroc. CDROM, session A2, papier 408, 1-2. ⟨hal-00591365⟩

• Communication dans un congrès

Monte Carlo simulation of electrical and thermal properties of nanowire-based insulated gate transistors

T. Sadi, Jean-Luc Thobel, F. Dessenne, Christophe Dalle

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591397⟩

• Chapitre d'ouvrage

Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩

• Article dans une revue

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• Communication dans un congrès

Sub-micron quantum cascadetransistors

H. Nguen Van, J.-C. Moreno, A. N. Baranov, M. Zaknoune, R. Teissier

36th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz, 2011, Houston, United States. ⟨hal-01858362⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used…

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• Article dans une revue

AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation

K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, B. Sijmus, Marie Germain, G. Borghs

Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩

• Article dans une revue

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩