Publications

Affichage de 9701 à 9710 sur 16175


  • Communication dans un congrès

Metamaterials and plasmonics at THz frequencies : design and applications

Tahsin Akalin, Wenchen Chen, Willie J. Padilla

SPIE Photonics Europe, Metamaterials V, 2010, Brussels, Belgium. ⟨hal-00573570⟩

  • Communication dans un congrès

Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires

V. Passi, J.P. Raskin, F. Ravaux, Emmanuel Dubois

23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩. ⟨hal-00549973⟩

  • Article dans une revue

AlGaN/GaN HEMT on (111) single crystalline diamond

M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, Christophe Gaquière, E. Kohn

Electronics Letters, 2010, 46, pp.299-300. ⟨10.1049/el.2010.2937⟩. ⟨hal-00549443⟩

  • Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

  • Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

  • Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩