Publications

• ART

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems

K. Smaali, S. Lenfant, S. Karpe, M. Oçafrain, P. Blanchard, D. Deresmes, S. Godey, A. Rochefort, J. Roncali, D. Vuillaume

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x103 (with an average value of 1.5x103) is reported. The "on" conductance state is clearly identified to the cis…

ACS Nano, 2010, 4, pp.2411-2421. ⟨10.1021/nn100295x⟩. ⟨hal-00548965⟩

• COMM

Application de la MKCE pour la modélisation de lignes de transmission couplées

S. Leman, Y. Poire, B. Demoulin

15ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM 2010, 2010, France. pp.CDROM, C5-4, 1-6. ⟨hal-00573213⟩

• ART

Time-resolved charge detection and back-action in quantum circuits

T. Ihn, S. Gustavsson, U. Gasser, R. Leturcq, I. Shorubalko, K. Ensslin

Physica E: Low-dimensional Systems and Nanostructures, 2010, 42, pp.803-808. ⟨10.1016/j.physe.2009.11.087⟩. ⟨hal-00568568⟩

• ART

Growth and electric properties of MPB BiScO3-PbTiO3 thin films on La0.7Sr0.3MnO3-coated silicon substrates

S.A. Zhang, X.L. Dong, Y. Chen, F. Cao, Y.Y. Zhang, G.S. Wang, N. Sama, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1583-1585. ⟨10.1111/j.1551-2916.2010.03630.x⟩. ⟨hal-00549506⟩

• ART

Bottom and top electrodes nature and PZT film thickness influence on electrical properties

N. Sama, Caroline Soyer, Denis Remiens, C. Verrue, R. Bouregba

Sensors and Actuators A: Physical , 2010, 158, pp.99-105. ⟨10.1016/j.sna.2009.11.032⟩. ⟨hal-00549503⟩

• ART

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩

• ART

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

L. Semra, A. Telia, A. Soltani

Surface and Interface Analysis, 2010, 42, pp.799-802. ⟨10.1002/sia.3462⟩. ⟨hal-00549910⟩

• ART

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, A. Curutchet, Christophe Gaquière, J. Mateos

Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩. ⟨hal-00548604⟩

• ART

Micromachining SU-8 pivot structures using AZ photoresist as direct sacrificial layers for a large wing displacement

X.Q. Bao, Thomas Dargent, Eric Cattan

Journal of Micromechanics and Microengineering, 2010, 20, pp.025005-1-13. ⟨10.1088/0960-1317/20/2/025005⟩. ⟨hal-00549518⟩

• ART

Graphene growth by molecular beam epitaxy using a solid carbon source

E. Moreau, F.J. Ferrer, D. Vignaud, S. Godey, X. Wallart

The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.300-303. ⟨10.1002/pssa.200982412⟩. ⟨hal-00549551⟩