Publications

• Communication dans un congrès

Characterization of black silicon structural and electrical properties for photovoltaics applications

R. Torres, Thomas Derrien, V. Vervisch, Mathieu Halbwax, F. Torregrosa, L. Roux, P. Delaporte, T. Sarnet, M. Sentis

European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium I : Advanced silicon materials research for electronic and photovoltaic applications II, 2010, Strasbourg, France. ⟨hal-00574120⟩

• Communication dans un congrès

Actuation and sensing integration challenges at the microscale : the Gordian Knot of the resonant bioMEMS realm

Liviu Nicu, Thomas Alava, Fabrice Mathieu, Cédric Ayela, Caroline Soyer, Denis Remiens

64th IEEE International Frequency Control Symposium, FCS 2010, 2010, United States. pp.77-80, ⟨10.1109/FREQ.2010.5556369⟩. ⟨hal-00568981⟩

• Article dans une revue

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of…

Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩

• Article dans une revue

Pilot-Aided Sequential Monte Carlo Estimation of Phase Distortions and Transmitted Symbols in Multicarrier Systems

François Septier, Yves Delignon, Atika Rivenq, Christelle Garnier

We address the challenging problem of the joint estimation of transmitted symbols and phase distortions in standardized multicarrier systems, including pilot or virtual subcarriers. These subcarriers create time correlation on the useful transmitted OFDM signal that we propose to take into account…

Journal of Electrical and Computer Engineering, 2010, 2010, pp.1-5. ⟨10.1155/2010/536057⟩. ⟨hal-00738663⟩

• Communication dans un congrès

Achievement and perspective of GaN technology for microwave applications

Sylvain Laurent Delage, Erwan Morvan, Nicolas Sarazin, Raphaël Aubry, Eric Chartier, Olivier Jardel, Marie-Antoinette Di Forte-Poisson, Christian Dua, Jean-Claude Jacquet, Stéphane Piotrowicz, Anna Piotrowska, Eliana Kaminska, Jean-Claude de Jaeger, Christophe Gaquière, Ulrich Heinlen, Ehrard Kohn, Mohammed Alomari, David Maier, Ján Kuzmík, Dionyz Pogany

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained…

18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, Jun 2010, Vilnius, Lithuania. pp.314-318. ⟨hal-00800875⟩

• Communication dans un congrès

Experimental and theoretical comparison of the optical properties of colloidal lead salt quantum dots

Iwan Moreels, Guy Allan, Christophe Delerue, Zeger Hens

Nanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany. ⟨hal-00574397⟩

• Article dans une revue

Terahertz response of InGaAs field effect transistors in quantizing magnetic fields

O.A. Klimenko, Y.A. Mityagin, H. Videlier, F. Teppe, N.V. Dyakonova, C. Consejo, S. Bollaert, V.N. Murzin, W. Knap

Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for…

Applied Physics Letters, 2010, 97 (2), pp.022111. ⟨10.1063/1.3462072⟩. ⟨hal-00548568⟩

• Article dans une revue

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy using a solid carbon source

E. Moreau, F.J. Ferrer, D. Vignaud, S. Godey, X. Wallart

The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.300-303. ⟨10.1002/pssa.200982412⟩. ⟨hal-00549551⟩

• Article dans une revue

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, A. Curutchet, Christophe Gaquière, J. Mateos

Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩. ⟨hal-00548604⟩