Publications
Affichage de 9801 à 9810 sur 16059
Growth and structure characterization of epitaxial Bi2Sr2Co2Oy thermoelectric thin films on LaAlO3 (001)
S. Wang, L. He, El Hadj Dogheche, Jie Chen, J. Wang, M. Chen, W. Yu, G. Fu
Thin Solid Films, 2010, 518, pp.6829-6832. ⟨10.1016/j.tsf.2010.06.060⟩. ⟨hal-00549008⟩
Field-induced vortices in ferroelectrics
Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Baudry, Laurent Lahoche
Advanced Research Workshop on Physics of Computer Technologies, PhysCompTech 2010, 2010, Natal, Brazil. ⟨hal-00574447⟩
Dielectric function of colloidal lead chalcogenide quantum dots obtained by a Kramers-Krönig analysis of the absorbance spectrum
Iwan Moreels, Guy Allan, Bram de Geyter, Ludger Wirtz, Christophe Delerue, Zeger Hens
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.235319-1-7. ⟨10.1103/PhysRevB.81.235319⟩. ⟨hal-00549057⟩
Effective parameter retrieval of phononic crystal slabs
Charles Croënne, Anne-Christine Hladky, Jerome O. Vasseur, Bertrand Dubus
IEEE International Ultrasonics Symposium, IUS 2010, 2010, San Diego, CA, United States. pp.1861-1864, ⟨10.1109/ULTSYM.2010.5935787⟩. ⟨hal-00800838⟩
Les chambres réverbérantes en électromagnétisme
B. Demoulin, P. Besnier
Hermes Science Publication, 422 p., 2010, ISBN 978-2-7462-2592-3. ⟨hal-00800613⟩
MEMS acoustiques
Michel Bruneau, Anne-Christine Hladky
Livre blanc de l'acoustique en France en 2010, Société Française d'Acoustique, pp.80, 2010, ISBN 978-2-919340-00-2. ⟨hal-00800615⟩
Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, A.M. Andrews, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, L. Toth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩. ⟨hal-00800884⟩
Spike timing dependent plasticity (STDP) learning rule in a nanoparticle-organic-memory field effect transistor (NOMFET)
F. Alibart, S. Pleutin, David Guérin, D. Vuillaume, O. Bichler, D. Querioz, C. Gamrat
5th International Meeting on Molecular Electronics, ElecMol'10, 2010, Grenoble, France. ⟨hal-00574105⟩
GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C
F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, S. Degroote, N. Vellas, Christophe Gaquière, Marie Germain, S. Decoutere
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩