Publications

• Article dans une revue

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

• Article dans une revue

Imperfection-sensitive ductility of aluminium thin films

M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen

Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩

• Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

• Article dans une revue

Fabrication and investigation of 1D and 2D structures in LiNbO3 thin films by pulsed laser ablation

F. Mériche, A. Boudrioua, R. Kremer, El Hadj Dogheche, E. Neiss-Clauss, R. Mouras, A. Fischer, M.-R. Beghoul, E. Fogarassy, N. Boutaoui

Optical Materials, 2010, 32 (11), pp.1427-1434. ⟨10.1016/j.optmat.2010.05.010⟩. ⟨hal-00512035⟩

• Article dans une revue

Terahertz photomixers based on ultra-wideband horn antennas, Photomélangeurs térahertz à antennes cornet ultra-large bande

Alexandre Beck, Tahsin Akalin, Guillaume Ducournau, Emilien Peytavit, Jean-Francois Lampin

We review recent advances in the development of new terahertz photomixers based on the integration of an ultrafast photodetector with an ultra-wideband transverse electromagnetic wave horn antenna. We expose first a simplified theory of this antenna, the choice of the dimensions and the results of…, Cet article expose le développement récent d'une nouvelle génération de photomélangeurs térahertz basés sur l'intégration d'un photodétecteur ultra-rapide avec une antenne ultra-large bande de type cornet à onde transverse électromagnétique. Nous exposons d'abord la théorie…

Comptes Rendus. Physique, 2010, 11, pp.472-479. ⟨10.1016/j.crhy.2010.05.006⟩. ⟨hal-00548958⟩

• Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

• Article dans une revue

Effects of ultrathin TiOx seeding layer on crystalline orientation and electrical properties of sputtered (Ba,Sr)TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2136-2139. ⟨10.1111/j.1551-2916.2010.03677.x⟩. ⟨hal-00549507⟩

• Article dans une revue

Two-dimensional simulation of the single-sided air-coupled ultrasonic pitch-catch technique for non-destructive testing

S. Delrue, K. van den Abeele, E. Blomme, J. Deveugele, P. Lust, Olivier Bou Matar

Ultrasonics, 2010, 50, pp.188-196. ⟨10.1016/j.ultras.2009.08.005⟩. ⟨hal-00549561⟩

• Article dans une revue

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud

The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface…

Journal of Applied Physics, 2010, 107 (10), pp.103514. ⟨10.1063/1.3357297⟩. ⟨hal-00549078⟩

• Article dans une revue

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

S.R. Plissard, Christophe Coinon, Ydir Androussi, X. Wallart

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained…

Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩. ⟨hal-00548708⟩