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Affichage de 9891 à 9900 sur 16273

Article dans une revue

Polarization-independent imaging with an acousto-optic tandem system

Konstantin B. Yushkov, Samuel Dupont, Jean-Claude Kastelik, V.B. Voloshinov

Optics Letters, 2010, 35, pp.1416-1418. ⟨10.1364/OL.35.001416⟩. ⟨hal-00549023⟩

Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,…

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

Article dans une revue

Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel

N. Azzaoui, Laurent Clavier

IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩

Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions…

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩