Publicaciones

Affichage de 10881 à 10890 sur 16387


  • Communication dans un congrès

Atomic scale structure of <111>-oriented Si nanowire

T. Xu

  • Communication dans un congrès

Optimisation de la bande passante d'un détecteur acousto-optique

N. Ouail, Michel Pommeray, Jean-Claude Kastelik, Samuel Dupont

Horizons de l'Optique, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575295⟩

  • Communication dans un congrès

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

18th Workshop on Advances in Analog Circuit Design, AACD 2009, 2009, Lund, Sweden. ⟨hal-00575268⟩

  • Communication dans un congrès

Wurtzite-zinc blende transition in InAs nanowires : experiments and theory

Jonas Johansson, Philippe Caroff, Kimberly A. Dick, Maria E. Messing, Jessica Bolinsson, Knut Deppert, Lars Samuelson

13th European Workshop on Metalorganic Vapor Phase Epitaxy, EWMOVPE XIII, 2009, Ulm, Germany. ⟨hal-00810483⟩

  • Article dans une revue

Continuity and discontinuity. An epistemological inquiry based on the use of categories in history of science

Raffaele Pisano, Ilaria Gaudiello

Organon, 2009, 41 (1), pp.245-265. ⟨hal-04507967⟩

  • Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency...

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

  • Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second...

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

  • Article dans une revue

Phononic crystals and manipulation of sound

Yan Pennec, Bahram Djafari-Rouhani, H. Larabi, Jerome O. Vasseur, Anne-Christine Hladky

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2080-2085. ⟨10.1002/pssc.200881760⟩. ⟨hal-00473419⟩