Publicaciones

• Article dans une revue

Nanowire biocompatibility in the brain - Looking for a needle in a 3D stack

Cecilia Eriksson-Linsmeier, Christelle Prinz, Lina M. E. Pettersson, Philippe Caroff, Lars Samuelson, Jens Schouenborg, Lars Montelius, Nils Danielsen

We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a...

Nano Letters, 2009, 9 (12), pp.4184–4190. ⟨10.1021/nl902413x⟩. ⟨hal-00471929⟩

• Article dans une revue

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

J.N. Gillet, J.Y. Degorce, M. Meunier

Semiconductor Science and Technology, 2009, 24, pp.095010-1-11. ⟨10.1088/0268-1242/24/9/095010⟩. ⟨hal-00473096⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete...

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• Communication dans un congrès

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Jean-Claude de Jaeger, Virginie Hoel, N. Defrance, Y. Douvry, Christophe Gaquière, M.A. Poisson, J. Thorpe, H. Lahreche, R. Langer

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147. ⟨hal-00474461⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Article dans une revue

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

T. Sadi, F. Dessenne, Jean-Luc Thobel

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and...

Journal of Applied Physics, 2009, 105 (5), pp.0537075. ⟨10.1063/1.3087703⟩. ⟨hal-00473651⟩

• Article dans une revue

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev

Journal of Applied Physics, 2009, 105, pp.073703-1-6. ⟨10.1063/1.3100206⟩. ⟨hal-00472679⟩

• Article dans une revue

Defect modes in one-dimensional anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We theoretically analyze the defect states in a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light. It is shown that the defect modes appear as peaks in the transmission...

Journal of Applied Physics, 2009, 106 (11), pp.113107. ⟨10.1063/1.3266005⟩. ⟨hal-00473077⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning...

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩