Publicaciones

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction...

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

A. Grüneis, Claudio Attaccalite, L. Wirtz, H. Shiozawa, R. Saito, T. Pichler, A. Rubio

A universal set of third–nearest neighbour tight–binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of N stacked sp2 graphene layers (N = 1 . . . ∞) with AB stacking sequence. The QP bands are strongly renormalized by electron–electron interactions which...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.205425-1-16. ⟨10.1103/PhysRevB.78.205425⟩. ⟨hal-00357778⟩

• Communication dans un congrès

Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope

A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin

International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the...

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• Article dans une revue

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high...

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

• Communication dans un congrès

An all-digital delta-sigma RF signal generator for mobile communication transmitters in 90nm CMOS

A. Frappe, B. Stefanelli, A. Flament, A. Kaiser, A. Cathelin

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2008, 2008, Atlanta, GA,, United States. pp.13-16, ⟨10.1109/RFIC.2008.4561375⟩. ⟨hal-00360804⟩

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

Modelling of bulk acoustic wave devices built on piezoelectric stack structures : impedance matrix analysis and network representation

Victor Y. Zhang, Bertrand Dubus, Jean-Etienne Lefebvre, Tadeusz Gryba

The fundamental electro-acoustic properties of a solid layer are deduced in terms of its impedance matrix (Z) and represented by a network for modeling the bulk acoustic wave devices built on piezoelectric stacked structures. A piezoelectric layer is described by a three-port equivalent network, a...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2008, 55 (3), pp.704-716. ⟨10.1109/TUFFC.2008.695⟩. ⟨hal-00360089⟩