Publicaciones

• Article dans une revue

A 7-dB 43-GHz CMOS distributed amplifier on high resistivity SOI substrates

C. Pavageau, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, N. Fel, J. Russat, L. Picheta, Francois Danneville

IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩. ⟨hal-00356663⟩

• Communication dans un congrès

Electron microscopy of silicides formation in Schottky barrier contacts to electronic devices

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, N. Reckinger, Xing Tang, G. Larrieu, Emmanuel Dubois

XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361545⟩

• Communication dans un congrès

Construction of symmetrical and asymmetrical notches from elementary steps in isotropic plates

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin, L. Dupont

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00362055⟩

• Communication dans un congrès

S-parameters measurements and small signal modeling of sub-65nm silicon MOSFETs up to 220 GHz

N. Waldhoff, Gilles Dambrine, Francois Danneville, D. Gloria

IEEE IMS Workshop on Advances in Circuit Design for Wideband Millimeter Wave Applications, 2008, Atlanta, GA, United States. ⟨hal-00811074⟩

• Communication dans un congrès

Positioning system based on the Ultra Wide Band technique for transport application

F. Elbahhar, M. Heddebaut, C. Tatkeu, Atika Rivenq, Jean-Michel Rouvaen

2nd International Conference on Wireless Communications in Underground and Confined Areas, ICWCUCA 2008, 2008, Val-d'Or, Québec, Canada. pp.1-3. ⟨hal-00800983⟩

• Article dans une revue

Size and shape effects on creep and diffusion at the nanoscale

G. Guisbiers, L. Buchaillot

Nanotechnology, 2008, 19, pp.435701-1-5. ⟨10.1088/0957-4484/19/43/435701⟩. ⟨hal-00357282⟩

• Article dans une revue

Post-buckling dynamic behavior of self-assembled 3D microstructures

L. Buchaillot, O. Millet, E. Quévy, D. Collard

Microsystem Technologies, 2008, 14, pp.69-78. ⟨10.1007/s00542-007-0400-7⟩. ⟨hal-00357276⟩

• Article dans une revue

Size, shape, composition, and segregation tuning of InGaAs thermo-optical properties

G. Guisbiers, G. Abudukelimu, M. Wautelet, L. Buchaillot

Journal of Physical Chemistry C, 2008, 112, pp.17889-17892. ⟨10.1021/jp805760h⟩. ⟨hal-00357284⟩

• Article dans une revue

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

J.F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, Erik Dujardin

A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the...

Small, 2008, 4 (6), pp.716-720. ⟨10.1002/smll.200700913⟩. ⟨hal-00360027⟩

• Article dans une revue

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

N. Reckinger, Xing Tang, V. Bayot, Dmitri Yarekha, Emmanuel Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

Journal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩