Publicaciones

• Communication dans un congrès

Vers une interprétation physique de la propagation d'onde sur une surface rugueuse

B. Morvan, Anne-Christine Hladky, M. Bavencoffe, D. Leduc, Catherine Potel, J.-L. Izbicki

2006. ⟨hal-00135350⟩

• Article dans une revue

Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength

Nicolas Chimot, Juliette Mangeney, Patrick Mounaix, Marc Tondusson, Karine Blary, Jean-Francois Lampin

The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and...

Applied Physics Letters, 2006, 89, pp.83519-1-3. ⟨10.1063/1.2338538⟩. ⟨hal-00162817⟩

• Article dans une revue

Electroformation of giant liposomes in microfluidic channels

K. Kuribayashi, G. Tresset, P. Coquet, H. Fujita, S. Takeuchi

Measurement Science and Technology, 2006, 17, pp.3121-3126. ⟨10.1088/0957-0233/17/12/S01⟩. ⟨hal-00244016⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des..., Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• Communication dans un congrès

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• Article dans une revue

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first...

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩

• Article dans une revue

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for...

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩

• Article dans une revue

130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect...

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2809-2812. ⟨10.1109/TED.2005.859707⟩. ⟨hal-00125134⟩

• Article dans une revue

Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI

H. Xu, E. Lampin, Emmanuel Dubois, S. Bardy, F. Murray

A purely vertical (0°) implantation and a large-angle tilt implantation (LATID) (usually 45°) are used to form the short channel of an LDMOS transistor. A modelling of both implantations is first carried on taking into account the geometrical effects of the LATID as well as the strong channelling...

Materials Science and Engineering: B, 2005, 124-125, pp.323-326. ⟨10.1016/j.mseb.2005.08.036⟩. ⟨hal-00138396⟩

• Article dans une revue

Unusual quantum confinement effects in IV-VI materials

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

Materials Science and Engineering: C, 2005, 25 (5-8), pp.687-690. ⟨10.1016/j.msec.2005.06.026⟩. ⟨hal-00126432⟩