Publicaciones

• COMM

AlGaN/GaN : processing and characterisation at TIGER laboratory

Raphaël Aubry, Damien Ducatteau, Erwan Morvan, B. Grimbert, Thierry Dean, M. Francois, S. Touati, Virginie Hoel, J.C. Pesant, A. Leroy, D. Thenot, Marie-Antoinette Di Forte-Poisson, Michel Rousseau, Eva Chartier

13th European Gallium Arsenide and Other Semiconductor Applications Symposium, GAAS 2005, 2005, Paris, France. ⟨hal-00126465⟩

• COMM

Multi-resolution modulation : an optimization criterion based on information theory

Marie Zwingelstein, M Gharbi, Marc G. Gazalet

2005, pp.CD-ROM, CT07-1. ⟨hal-00126481⟩

• COMM

Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriques

Christophe Delerue, Guy Allan

Congrès général de la Société Française de Physique, 2005, Lille, France. ⟨hal-00126454⟩

• COMM

Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

Comsol Multiphysics Conference, 2005, Paris, France. ⟨hal-00126464⟩

• ART

Comparison between DS-CDMA and modified Gegenbauer functions for a multi-user communication Ultra Wide Band system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, Marc Heddebaut, Tariq Boukour

An innovative multiuser communication system based on the ultra-waveband (UWB) technique is studied. Two coding techniques are proposed: the first is based on direct-sequence code-division multiple access (DS-CDMA) associated with the UWB system. The second innovative technique uses orthogonal...

IEE Proceedings. Communications, 2005, 152 (6), pp.1021-1028. ⟨10.1049/ip-com:20045236⟩. ⟨hal-00126472⟩

• OTHER

Amélioration des transmissions vidéo MPEG-2 sur lignes ADSL basée sur une optimisation conjointe source/canal de la qualité vidéo

C. Goudemand

2005. ⟨hal-00126473⟩

• COMM

Molecular interactions of PTCDA on Si(100) and H-Si(100) surfaces : towards self-assembled molecular nanocristals

Francois Vaurette, T. Soubiron, B. Grandidier, J.P. Nys, X. Wallart, D. Stiévenard

Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126448⟩

• OTHER

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences

C. Pavageau

2005. ⟨hal-00126201⟩

• OTHER

Réalisation et caractérisation de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon

I. Duszynski

2005. ⟨hal-00126203⟩

• ART

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the...

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩