Publicaciones

• COMM

Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs

M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger

2004, pp.571-574. ⟨hal-00142307⟩

• COMM

Analysis of hot carrier aging degradation in GaN MESFETs

R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

2004, pp.143-146. ⟨hal-00141969⟩

• ART

AlGaN/GaN HEMTs : technology and microwave performance

Jean-Claude de Jaeger

Microwave Engineering Europe, 2004, mai, pp.30. ⟨hal-00141996⟩

• COMM

Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité

M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩

• COMM

Data transmission and distance measurement between two trains in tunnels

M. Lienard, Pierre Laly, Pierre Degauque

2004, pp.CD session B2. ⟨hal-00142001⟩

• OTHER

Analyse des propriétés électromagnétiques des écrans cylindriques, application à la caractérisation de l'efficacité de blindage des câbles

Frédéric Broydé

2004. ⟨hal-00142006⟩

• COMM

Propagation characteristics in subway tunnels : application to a communication and distance measurement system

M. Lienard, Pierre Degauque, Pierre Laly

2004, pp.240-243. ⟨hal-00142024⟩

• COMM

Plateforme SAW dédiée à la microfluidique discrète pour applications biologiques

A. Renaudin, P. Tabourier, V. Zhang, C. Druon

Actes du 2ème Congrès Français de Microfluidique, 2004, Toulouse, France. ⟨hal-00142067⟩

• ART

High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates

A. Minko, Virginie Hoel, Sylvie Lepilliet, Gilles Dambrine, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

IEEE Electron Device Letters, 2004, 25, pp.167-169. ⟨hal-00141951⟩

• ART

Confinement effects in PbSe quantum wells and nanocrystals

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.245321/1-9. ⟨10.1103/PhysRevB.70.245321⟩. ⟨hal-00141253⟩