Publicaciones

• ART

Matching ultrasonic transducer using two matching layers where one of them is glue

Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad

NDT & E International, 2004, 37, pp.591-596. ⟨hal-00141975⟩

• COMM

Semi-blind estimation in a DMT-based transmission on indoor power line

Virginie Degardin, M. Lienard, Pierre Degauque

2004, pp.195-199. ⟨hal-00142017⟩

• ART

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, R. Quere, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/...

Journal of Crystal Growth, 2004, 272 (1-4), pp.305-311. ⟨10.1016/j.jcrysgro.2004.08.121⟩. ⟨hal-00141957⟩

• OTHER

Contribution à l'optimisation de transistors à effet de champ MESFET à base de carbure de silicium 4 H pour applications en amplification de puissance RF/hyperfréquence

A. Kerlain

2004. ⟨hal-00141954⟩

• ART

Ultra wideband technique for short wireless communication system

F. Elbahhar, Atika Rivenq, M. Heddebaut, Jean-Michel Rouvaen, J.P. Ghys

Physical and Chemical News, 2004, 15, pp.4-9. ⟨hal-00141980⟩

• COMM

Numerical analysis of the process induced stresses in micromachined cantilever

V. Senez, T. Hoffmann

2004, pp.126-131. ⟨hal-00141034⟩

• ART

High performance evanescent edge coupled waveguide uni-traveling-carrier photodiodes for >40Gb/s optical receivers

Mohand Achouche, Vincent Magnin, Didier Decoster, Joseph Harari, François Lelarge, Estelle Derouin, Christophe Jany, David Carpentier, Fabrice Blache

We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating. Optimization of the optical input waveguide was made using the method of the genetic...

IEEE Photonics Technology Letters, 2004, 16, pp.584-586. ⟨10.1109/LPT.2003.821082⟩. ⟨hal-00141183⟩

• ART

Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching

Samuel Dupont, Arnaud Beaurain, Patrice Miska, Malek Zegaoui, Jean-Pierre Vilcot, Hongwu Li, M. Constant, Didier Decoster, Jean Chazelas

The fabrication and characterisation of low-loss InGaAsP/InP optical submicron waveguides made with ICP etching is reported. Their width ranges from 0.2 to 2 μm. For the 0.5 μm width, the propagation losses at λ=1.55 μm as low as 4.2 dB/mm have been measured.

Electronics Letters, 2004, 40, pp.865-866. ⟨hal-00141187⟩

• COMM

Cavitation bubble structures in low and high intensity ultrasonic fields

A. Moussatov, C. Granger, Bertrand Dubus, R. Mettin, T. Tervo, W. Lauterborn

Anglo-French Physical Acoustics Conference, 2004, Wye, United Kingdom. ⟨hal-00133856⟩

• ART

Nonlinear effects in T-branch junctions

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, E. Pichonat, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Electron Device Letters, 2004, 25, pp.235-237. ⟨hal-00133878⟩