Publicaciones

• COMM

Evaluation of electrical impedance spectra for single biocells in microfluidic devices using combined FEMLAB/ HSPICE simulated models

V. Senez, T. Yamamoto, B. Poussard, T. Fukuba, J.M. Capron, T. Fujii

2004, pp.99-102. ⟨hal-00141012⟩

• ART

Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor

A. Bolognesi, M. Berliocchi, M. Manenti, Aldo Di Carlo, Paolo Lugli, Kamal Lmimouni, Claude Dufour

We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the...

IEEE Transactions on Electron Devices, 2004, 51 (12), pp.1997-2003. ⟨10.1109/TED.2004.838333⟩. ⟨hal-00140735⟩

• COMM

Self-assembled molecular diodes on silicon

S. Lenfant, C. Merckling, David Guérin, D. Vuillaume, F. Tran Van, C. Chevrot

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140751⟩

• COMM

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• COMM

Performance improvement of DS-CDMA on the LOS multipath 60 GHz channel using block turbo coding

A. Goalic, W. Sawaya, R. Okouyi, Laurent Clavier

2004, pp.133-136. ⟨hal-00142300⟩

• ART

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above...

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• OTHER

Evaluation de la dégradation du béton par ondes ultrasonores

S. Ould Naffa

2004. ⟨hal-00162783⟩

• COMM

Transistor MOSFET Schottky en régime nanométrique

G. Larrieu, Emmanuel Dubois

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩

• ART

Hysteretic behavior of the charge injection in single silicon nanoparticles

H. Diesinger, Thierry Melin, D. Deresmes, D. Stievenard, T. Baron

Applied Physics Letters, 2004, 85, pp.3546-3548. ⟨hal-00141252⟩

• COMM

Formation of nano-domains in alkyltrichlorosilane self-assembled monolayers deposited on silicon : applications to molecular electronics

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140740⟩