Publicaciones

• Communication dans un congrès

Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs

M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger

2004, pp.571-574. ⟨hal-00142307⟩

• Communication dans un congrès

Performance improvement of DS-CDMA on the LOS multipath 60 GHz channel using block turbo coding

A. Goalic, W. Sawaya, R. Okouyi, Laurent Clavier

2004, pp.133-136. ⟨hal-00142300⟩

• Communication dans un congrès

THz study of liquids using an integrated bragg filter

Jean-Francois Lampin, L. Desplanque, M. Ternisien, T. Crepin, C. Walloth, D. Lippens, F. Mollot

2004, pp.469-470. ⟨hal-00140721⟩

• Article dans une revue

Confinement effects in PbSe quantum wells and nanocrystals

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.245321/1-9. ⟨10.1103/PhysRevB.70.245321⟩. ⟨hal-00141253⟩

• Communication dans un congrès

Self-assembled molecular diodes on silicon

S. Lenfant, C. Merckling, David Guérin, D. Vuillaume, F. Tran Van, C. Chevrot

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140751⟩

• Article dans une revue

Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor

A. Bolognesi, M. Berliocchi, M. Manenti, Aldo Di Carlo, Paolo Lugli, Kamal Lmimouni, Claude Dufour

We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the...

IEEE Transactions on Electron Devices, 2004, 51 (12), pp.1997-2003. ⟨10.1109/TED.2004.838333⟩. ⟨hal-00140735⟩

• Communication dans un congrès

Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité

M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩

• Communication dans un congrès

Transistor MOSFET Schottky en régime nanométrique

G. Larrieu, Emmanuel Dubois

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩

• Article dans une revue

Broadband frequency filtering and mode matching using finline technology

T. Decoopman, X. Melique, O. Vanbésien, D. Lippens

Microwave and Optical Technology Letters, 2004, 41, pp.234-7. ⟨hal-00133953⟩

• Article dans une revue

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois, G. Larrieu

Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩