Publicaciones

• COMM

Etude et optimisation de commutateurs DOS à haute diaphotie sur InP

Malek Zegaoui, Joseph Harari, V. Magnin, Didier Decoster

22èmes Journées Nationales d'Optique Guidée, JNOG 2003, Nov 2003, Valence, France. ⟨hal-00146563⟩

• COMM

Novel design for semiconductor optical filters using apodised Bragg gratings

S. Garidel, Jean-Pierre Vilcot, Didier Decoster

NEFERTITI Workshop on Recent advances in all-optical processing of microwave and RF signals & Fiber radio systems, 2003, Valence, France. ⟨hal-00146554⟩

• COMM

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• COMM

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• COMM

Property comparison of 2 mm thick cymbal and double dipper transducers

S.E. Danley, R.E. Newnham, D.C. Markley, R.J. Meyer, Anne-Christine Hladky

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145967⟩

• ART

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905. ⟨hal-00145980⟩

• COMM

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• COMM

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter...

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• ART

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• COMM

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩