Publicaciones

Affichage de 14291 à 14300 sur 16256


  • Communication dans un congrès

Physics-based process simulation of ultrashallow junctions

N.E.B. Cowern, B. Colombeau, R. Duffy, V. Venezia, C. Dachs, R. Lindsay, Fuccio Cristiano, E. Lampin, Alain Claverie

Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States. ⟨hal-00146422⟩

  • Communication dans un congrès

The effect of quantum confinement on the optical properties of semiconductor nanocrystals

Christophe Delerue, Guy Allan

Materials Research Society Fall Meeting, 2003, Boston, MA, United States. ⟨hal-00146644⟩

  • Communication dans un congrès

HEMT métamorphique pour applications de puissance en bande V : influence de la couche de barrière

B. Bonte, M. Ardouin, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2003, pp.4A2-2. ⟨hal-00146696⟩

  • Communication dans un congrès

Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : quantitative charge measurements and dipole-dipole interactions

Thierry Melin, H. Diesinger, D. Deresmes, D. Stiévenard

12th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM'03, 2003, Eindhoven, Netherlands. ⟨hal-00146614⟩

  • Communication dans un congrès

Charge transport in self-assembled molecular rectifying diodes on silicon

Christophe Delerue, Guy Allan, Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski

Workshop France-USA on Molecular-Scale Electronics, 2003, Paris, France. ⟨hal-00146645⟩

  • Article dans une revue

Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates

A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren

Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩

  • Communication dans un congrès

Unusual density of states in brick-shaped PbSe nanocrystals

Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Daniel Vanmaekelbergh, Didier Stiévenard

American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146641⟩

  • Article dans une revue

60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, Didier Theron

IEEE Electron Device Letters, 2003, 24, pp.724-726. ⟨hal-00146648⟩