Publicaciones

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩

• Article dans une revue

In vitro studies of human and rat osteoclast activity on hydroxyapatite, b-tricalcium phosphate, calcium carbonate

Francine Monchau, A Lefèvre, Michel Descamps, A Belquin-Myrdycz C, P Laffargue, H F Hildebrand

Investigations on the ceramic degradation caused by osteoclasts are designed to assess osteoclast Á/ceramic interactions and to determine which ceramics are more suitable for use as bone substitute. This study investigated the resorptive activity of osteoclasts on ceramics presenting different...

Biomolecular Engineering, 2002, 19 (2-6), pp.143-152. ⟨10.1016/S1389-0344(02)00023-0⟩. ⟨hal-03280920⟩

• Communication dans un congrès

The linearisation of an electrostrictive device for MEMS applications

D. Jenkins, E. Fribourg-Blanc, Eric Cattan, Denis Remiens

13th IEEE International Symposium on Applications of Ferroelectrics, ISAF 2002, 2002, Japan. pp.479-482. ⟨hal-00250396⟩

• Communication dans un congrès

Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers

D. Vignaud, Y. Cordier, P. Miska, D. Ferré

28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542. ⟨hal-00250216⟩

• Article dans une revue

Electrical and optical characterizations by prism-coupling method of PZT deposited in-situ by sputtering

El Hadj Dogheche, Denis Remiens, G. Velu

Vacuum, 2002, 66, pp.1-8. ⟨hal-00250392⟩

• Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates : influence of film thickness and orientation

T. Haccart, Eric Cattan, Denis Remiens

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.78-88. ⟨hal-00250395⟩

• Communication dans un congrès

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor

E. Lefebvre, M. Zaknoune, F. Mollot

14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩

• Article dans une revue

Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures

L. Kurowski, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Barbe, Jérome Chevalier, M. Constant

Materials Research Society Symposia Proceedings, 2002, 719, pp.275-281. ⟨hal-00278932⟩

• Communication dans un congrès

Reliability of polysilicon microstructures : in situ test benches

O. Millet, L. Buchaillot, D. Collard

2002, pp.1795-1800. ⟨hal-00148790⟩

• Article dans une revue

Non-quasi-static transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

Emmanuel Dubois, E. Robilliart

A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy...

IEEE Electron Device Letters, 2002, 23 (1), pp.43-45. ⟨10.1109/55.974807⟩. ⟨hal-00148743⟩