Publicaciones

• Communication dans un congrès

Controlled charge injection in semiconductor nanocrystals

Thierry Melin, D. Deresmes, D. Stievenard

2002, 2 pp. ⟨hal-00149667⟩

• Article dans une revue

Electronic structure of the GaSe/Si (111) and InSe/Si (111) heterojunctions

M.O.D. Camara, A. Mauger, I. Devos

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.205308/1-8. ⟨hal-00149671⟩

• Article dans une revue

Efficient intraband optical transitions in Si nanocrystals

Guy Allan, Christophe Delerue

Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational mode. New types of transitions are reported, with no equivalence in direct gap...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66, pp.233303/1-4. ⟨10.1103/PhysRevB.66.233303⟩. ⟨hal-00149664⟩

• Article dans une revue

Optical properties of remotely doped AlAs/GaAs coupled quantum wire arrays : II- Fermi-edge singularity issues

Thierry Melin, F. Laruelle

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.195303/1-8. ⟨hal-00149672⟩

• Communication dans un congrès

High temperature magneto-acoustic anomalies in active material for parametric phase conjugation

R. Klopotov, L. Krutyyansky, Vladimir Preobrazhensky

Proceedings of the 16th International Symposium on Nonlinear Acoustics, ISNA-16, 2002, Moscow, Russia. ⟨hal-00148683⟩

• Communication dans un congrès

Organic thin film transistors made on high-k gate insulators

K. Lmimouni, C. Dufour, Denis Remiens, D. Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2002, 2002, Strasbourg, France. ⟨hal-00148715⟩

• Article dans une revue

Non-quasi-static transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

Emmanuel Dubois, E. Robilliart

A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy...

IEEE Electron Device Letters, 2002, 23 (1), pp.43-45. ⟨10.1109/55.974807⟩. ⟨hal-00148743⟩

• Communication dans un congrès

Caractérisation de transistors à effet de champ à base de GaN

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard

3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France. ⟨hal-00149714⟩

• Communication dans un congrès

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

2002, pp.503-506. ⟨hal-00148650⟩

• Communication dans un congrès

Etude de la réactivité des surfaces d'alliages GaInAs (100) à un flux de phosphore

X. Wallart, C. Priester, D. Deresmes, F. Mollot

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France. ⟨hal-00148676⟩