Publicaciones

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Communication dans un congrès

Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments

S. Shapoval, V. Gurtovoi, A. Kovalchuk, L. Eastman, A. Vertjachih, Christophe Gaquière, D. Theron

2003, pp.90-93. ⟨hal-00149939⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method...

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Chapitre d'ouvrage

Guided wave techniques for optical characterization of lead based ferroelectrics

El Hadj Dogheche, X. Lansiaux, Denis Remiens

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.211-235, 2003. ⟨hal-00132004⟩

• Chapitre d'ouvrage

Theory of Si nanocrystals

Guy Allan, Christophe Delerue, Michel Lannoo

The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a...

PAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003, 978-1-4020-1194-8. ⟨10.1007/978-94-010-0149-6_22⟩. ⟨hal-00131749⟩

• Communication dans un congrès

Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à différentes températures

B. Boudart, Jean-François Llibre, D. Briand, Boubekeur Tala-Ighil, H. Toutah, Yannick Guhel, Jean-Claude de Jaeger, Z. Bougrioua, Marianne Germain, Ingrid Moerman

13es Journées Nationales Microondes, 2003, Lille, France. ⟨hal-01654259⟩

• Autre publication scientifique

Spectroscopie de résonance ultrasonore des ondes de surface. Application au contrôle non destructif de billes en céramique

S. Petit

2003. ⟨hal-00147094⟩

• Article dans une revue

Damage assessment in composites by Lamb waves and wavelet coefficients

Christophe Paget, Sébastien Grondel, K. Levin, Christophe Delebarre

Smart Materials and Structures, 2003, 12, pp.393-402. ⟨hal-00147096⟩

• Communication dans un congrès

Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en régime statique d'un HEMT AlGaN/GaN

Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger

2003, pp.1D-11. ⟨hal-00146690⟩

• Article dans une revue

A post-processor for reducing temporal busyness in low-bit-rate applications

François-Xavier Coudoux, Marc G. Gazalet, Patrick Corlay

Signal Processing: Image Communication, 2003, 18, pp.455-463. ⟨hal-00146716⟩